component
MP3437GJ-Z
Public Made by Adomby adom
Monolithic Power Systems DC-DC Converters, TSOT-23-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| mp3437gj-z-etched.glb | 17d ago |
| mp3437gj-z-etched.step | 17d ago |
| mp3437gj-z-hero.glb | 17d ago |
| mp3437gj-z-hero.overlay.json | 17d ago |
| mp3437gj-z.glb | 17d ago |
| mp3437gj-z.kicad_mod | 17d ago |
| mp3437gj-z.kicad_sym | 17d ago |
| mp3437gj-z.lbr | 17d ago |
| mp3437gj-z.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MP3437GJ-Z
Monolithic Power Systems · DC-DC Converters · TSOT-23-8
MP3437GJ-Z from Monolithic Power Systems, in a TSOT-23-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BST | passive | Bootstrap pin; a capacitor between BST and SW powers the synchronous high-side MOSFET (absolute maximum BST is VSW + 4.5V). |
| 2 | VOUT | power_out | Output pin connected to the drain of the high-side MOSFET (HS-FET); it powers VDD when VOUT is above VIN and VIN is below 3.4V (absolute maximum -0.3V to +18V). |
| 3 | SW | passive | Converter switch pin connected to the drain of the low-side MOSFET and the source of the high-side MOSFET; connect the power inductor to SW (absolute maximum -0.3V to +18V, -5V for under 10ns). |
| 4 | GND | power_in | Power ground; the datasheet recommends connecting the analog signal close to this GND pin. |
| 5 | FB | input | Feedback input; connect a resistor divider from the VOUT pin to the FB pin (absolute maximum -0.3V to +4.5V). |
| 6 | VDD | power_out | Internal bias supply that must be decoupled with a 4.7µF ceramic capacitor as close to the pin as possible; the regulator from VIN to VOUT is disabled if the bias voltage exceeds 3.4V, and the maximum external VDD bias is 3.6V. |
| 7 | EN | input | Chip enable control that programs VIN's under-voltage lockout; it must not be floated and must be pulled up or down externally, and connecting it to VIN gives automatic start-up (absolute maximum -0.3V to +18V). |
| 8 | VIN | power_in | Input supply that must be bypassed locally and supplied above 2.7V during start-up to provide enough voltage to VDD (operation range 0.8V to 16V, absolute maximum -0.3V to +18V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Monolithic Power Systems |
| Package | TSOT-23-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| SW pin voltage | -0.3 | 18 | V | 4 | |||
| SW pin voltage transient | -5 | 22 | V | <10ns | 4 | ||
| VIN, EN, MODE, VOUT pin voltage | -0.3 | 18 | V | 4 | |||
| BST pin voltage | -0.3 | V | max = VSW + 4.5V | 4 | |||
| All other pins voltage | -0.3 | 4.5 | V | 4 | |||
| HS-FET body diode inrush current | 15 | A | during input start-up (note 2) | 4 | |||
| Continuous power dissipation TSOT23-8 | PD | 2.4 | W | TA = 25°C | 4 | ||
| Junction temperature | TJ | 150 | °C | 4 | |||
| Lead temperature | 260 | °C | 4 | ||||
| Storage temperature | -65 | 150 | °C | 4 | |||
| ESD human body model | 2000 | V | HBM | 4 | |||
| ESD charged device model | 750 | V | CDM | 4 | |||
| Start-up input voltage | VST | 2.7 | 16 | V | 4 | ||
| Operation input voltage | VIN | 0.8 | 16 | V | 4 | ||
| Startup input voltage with VDD bias | VST2 | 0.95 | 16 | V | 4 | ||
| Maximum external VDD bias voltage | VDD | 3.6 | V | 4 | |||
| Boost output voltage | VOUT | 16 | V | minimum is VIN (expression as printed) | 4 | ||
| Operating junction temperature | TJ | -40 | 125 | °C | 4 | ||
| Start-up input voltage | VST | 2.7 | 16 | V | No VDD bias | 5 | |
| Start-up input voltage | VST | 0.95 | 16 | V | VDD = 3V | 5 | |
| Operating input voltage | VIN | 0.8 | 16 | V | 5 | ||
| Operating VDD voltage | VDD | 2.3 | 2.6 | V | VIN = 2.7V, 0mA | 5 | |
| VDD under-voltage lockout rising threshold | VDDUVLO_R | 2.2 | 2.4 | 2.6 | V | VDD rising | 5 |
| VDD UVLO falling threshold | VDDUVLO_F | 2 | 2.2 | 2.4 | V | VDD falling | 5 |
| Quiescent current (measured on VIN) | IQ | 3 | 6 | μA | VFB = 1.05V, VIN = 3V, VOUT = 8V, no switching, measured on VIN | 5 | |
| Quiescent current (measured on VOUT) | IQ | 380 | 500 | μA | VFB = 1.05V, VIN = 3V, VOUT = 8V, no switching, measured on VOUT | 5 | |
| Quiescent current in pass-through mode | IQ | 430 | 550 | μA | VFB = 1.05V, VIN = 9V, VOUT floating, PSM, pass-through mode, measured on VIN | 5 | |
| EN turn-on voltage threshold | VEN_ON | 1.15 | 1.23 | 1.31 | V | VEN rising (switching) | 5 |
| EN turn-on hysteresis | IEN_HYS | 3.5 | 5 | 6.5 | μA | 1.0V < EN < VEN_ON | 5 |
| Switching frequency | fSW | 500 | 600 | 700 | kHz | VIN = 3.3V, VOUT = 8V | 5 |
| FB reference voltage | VREF | 0.99 | 1 | 1.01 | V | TJ = 25°C | 5 |
| FB reference voltage | VREF | 0.985 | 1 | 1.015 | V | TJ = -40°C to +125°C | 5 |
| HS-FET zero-current detection (ZCD) | -200 | 0 | 300 | mA | PSM, VFB = 1V, L = 1.5μH, VOUT = 8V | 5 | |
| Switching current limit | IPK_LIMT | 8.5 | 9.5 | 11 | A | 6 | |
| Output over-voltage protection (OVP) threshold | 16 | 16.5 | V | 6 | |||
| Operating VDD voltage at 12V input | VDD | 3.4 | V | VIN = 12V, 0mA - 10mA | 5 | ||
| Shutdown current | ISD | 2 | μA | VEN = 0V, measured on VIN | 5 | ||
| EN high voltage threshold | VEN_H | 1 | V | VEN rising (micro-power) | 5 | ||
| EN low voltage threshold | VEN_L | 0.4 | V | VEN falling (micro-power) | 5 | ||
| EN input current | IEN | 0 | μA | VEN = 0V, 1.5V | 5 | ||
| EN turn-on delay | 220 | μs | EN is on, IC starts switching | 5 | |||
| LS-FET minimum on time | tMIN_ON | 130 | ns | 5 | |||
| LS-FET maximum on time | tMAX_ON | 7.5 | μs | 5 | |||
| FB input current | IFB | 50 | nA | VFB = 1.05V | 5 | ||
| Soft-start time | tSS | 4 | ms | VFB from 0V to 1V | 5 | ||
| LS-FET switch on resistance | RON_L | 14 | mΩ | 6 | |||
| High-side synchronous switch on resistance | RON_H | 21 | mΩ | 6 | |||
| LS-FET leakage current | 0.1 | μA | VSW = 16V, TJ = 25°C | 6 | |||
| HS-FET leakage current | 0.1 | μA | VOUT = 16V, VSW = 0V, TJ = 25°C | 6 | |||
| Output OVP hysteresis | 0.5 | V | 6 | ||||
| FB OVP threshold | 110 | % VREF | PSM only (note 15) | 6 | |||
| FB OVP hysteresis | 3 | % VREF | PSM only (note 15) | 6 | |||
| Thermal shutdown | TSD | 150 | °C | 6 | |||
| Thermal shutdown hysteresis | TSD_HYS | 25 | °C | 6 | |||
| Thermal resistance junction-to-case | θJC | 12 | °C/W | EVL3437-J-00A | 4 | ||
| Thermal resistance junction-to-case | θJC | 55 | °C/W | JESD51-7 JEDEC board | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | package, connect the SW pin on the top PCB layer using the copper that is under the IC | 22 |
CAD (KiCad official)
- Symbol:
MP3437GJ-Z - Footprint:
Package_TO_SOT_SMD:TSOT-23-8 - 3D model: TSOT-23-8 (KiCad packages3D, STEP)
- 3D model files:
mp3437gj-z-etched.step/mp3437gj-z-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mp3437gj-z.step/mp3437gj-z.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Monolithic Power Systems datasheet (27 pp, sha256
9dd3a7e86130a89a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).