component
MP3205
Public Made by Adomby adom
Minos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MP3205
Minos · MOSFETs · TO-220
MP3205 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input; gate-to-source voltage is limited to ±20 V with threshold of 2 to 4 V at ID=250µA. |
| 2 | Drain | passive | Drain terminal (also connected to the mounting tab), rated 55 V VDSS and 110 A continuous drain current. |
| 3 | Source | passive | Source terminal, carrying up to 110 A continuous body-diode/source current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 55 | V | TC = 25°C | 2 | ||
| Continuous Drain Current | ID | 110 | A | TC = 25°C | 2 | ||
| Continuous Drain Current | ID | 80 | A | TC = 100 °C | 2 | ||
| Pulsed Drain Current | IDM | 440 | A | Note1 | 2 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Single Pulse Avalanche Energy | EAS | 1500 | mJ | L=1mH, VDs=44V, Start TJ=25℃ | 2 | ||
| Avalanche Current | IAR | 25 | A | 2 | |||
| Repetitive Avalanche Current | EAR | 20 | mJ | 2 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | Note3 | 2 | ||
| Power Dissipation | PD | 210 | W | TO-220 | 2 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 175 | ℃ | 2 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 2 | |||
| Junction-to-Case Thermal Resistance | RθJC | 0.75 | ℃/W | TO-220 | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | TO-220 | 2 | ||
| Drain to Source Breakdown Voltage | VDSS | 55 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS =55V, VGS= 0V, Tj = 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 10 | µA | VDS =44V, VGS= 0V, Tj = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =+20V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | 100 | nA | VGS =-20V | 3 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 7.2 | 9 | mΩ | VGS=10V, ID=40A | 3 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA | 3 | |
| Continuous Source Current (Body Diode) | IS | 110 | A | TC=25 °C | 3 | ||
| Maximum Pulsed Current (Body Diode) | ISM | 440 | A | 3 | |||
| Diode Forward Voltage | VSD | 0.9 | 1.3 | V | IS=62A, VGS=0V | 3 | |
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | 0.055 | V/℃ | ID=250uA, Reference25℃ | 2 | ||
| Forward Transconductance | gfs | 65 | S | VDS=20V, ID =40A(Note4) | 3 | ||
| Gate resistance | Rg | 1.7 | Ω | f = 1.0MHz | 3 | ||
| Input Capacitance | Ciss | 3247 | PF | VGS = 0V VDS = 25V f = 1.0MHz | 3 | ||
| Output Capacitance | Coss | 781 | PF | VGS = 0V VDS = 25V f = 1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 211 | PF | VGS = 0V VDS = 25V f = 1.0MHz | 3 | ||
| Turn-on Delay Time | td(ON) | 14 | ns | ID =62A, VDD =28V, VGS = 10V, RG =4.5Ω | 3 | ||
| Rise Time | tr | 101 | ns | ID =62A, VDD =28V, VGS = 10V, RG =4.5Ω | 3 | ||
| Turn-Off Delay Time | td(OFF) | 50 | ns | ID =62A, VDD =28V, VGS = 10V, RG =4.5Ω | 3 | ||
| Fall Time | tf | 65 | ns | ID =62A, VDD =28V, VGS = 10V, RG =4.5Ω | 3 | ||
| Total Gate Charge | Qg | 146 | nC | ID =62A, VDD =44V, VGS = 10V | 3 | ||
| Gate to Source Charge | Qgs | 10 | nC | ID =62A, VDD =44V, VGS = 10V | 3 | ||
| Gate to Drain (Miller) Charge | Qgd | 17.5 | nC | ID =62A, VDD =44V, VGS = 10V | 3 | ||
| Reverse Recovery Time | Trr | 69 | ns | IS=62A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | 4 | ||
| Reverse Recovery Charge | Qrr | 143 | nC | IS=62A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | 4 |
CAD (KiCad official)
- Symbol:
MP3205 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
mp3205-etched.step/mp3205-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mp3205.step/mp3205.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (10 pp, sha256
ab22913348bfcc91, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MP3205
**Minos** · MOSFETs · TO-220
MP3205 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input; gate-to-source voltage is limited to ±20 V with threshold of 2 to 4 V at ID=250µA. |
| 2 | Drain | passive | Drain terminal (also connected to the mounting tab), rated 55 V VDSS and 110 A continuous drain current. |
| 3 | Source | passive | Source terminal, carrying up to 110 A continuous body-diode/source current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 55 | V | TC = 25°C | 2 |
| Continuous Drain Current | ID | | | 110 | A | TC = 25°C | 2 |
| Continuous Drain Current | ID | | | 80 | A | TC = 100 °C | 2 |
| Pulsed Drain Current | IDM | | | 440 | A | Note1 | 2 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 2 |
| Single Pulse Avalanche Energy | EAS | | | 1500 | mJ | L=1mH, VDs=44V, Start TJ=25℃ | 2 |
| Avalanche Current | IAR | | | 25 | A | | 2 |
| Repetitive Avalanche Current | EAR | | | 20 | mJ | | 2 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | Note3 | 2 |
| Power Dissipation | PD | | | 210 | W | TO-220 | 2 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | | 175 | ℃ | | 2 |
| Maximum Temperature for Soldering | TL | | | 300 | ℃ | | 2 |
| Junction-to-Case Thermal Resistance | RθJC | | | 0.75 | ℃/W | TO-220 | 2 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62.5 | ℃/W | TO-220 | 2 |
| Drain to Source Breakdown Voltage | VDSS | 55 | | | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS | | | 1 | µA | VDS =55V, VGS= 0V, Tj = 25℃ | 2 |
| Drain to Source Leakage Current | IDSS | | | 10 | µA | VDS =44V, VGS= 0V, Tj = 125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) | | | 100 | nA | VGS =+20V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) | | | 100 | nA | VGS =-20V | 3 |
| Drain-to-Source On-Resistance | RDS(ON) | | 7.2 | 9 | mΩ | VGS=10V, ID=40A | 3 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS = VGS, ID = 250µA | 3 |
| Continuous Source Current (Body Diode) | IS | | | 110 | A | TC=25 °C | 3 |
| Maximum Pulsed Current (Body Diode) | ISM | | | 440 | A | | 3 |
| Diode Forward Voltage | VSD | | 0.9 | 1.3 | V | IS=62A, VGS=0V | 3 |
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.055 | | V/℃ | ID=250uA, Reference25℃ | 2 |
| Forward Transconductance | gfs | | 65 | | S | VDS=20V, ID =40A(Note4) | 3 |
| Gate resistance | Rg | | 1.7 | | Ω | f = 1.0MHz | 3 |
| Input Capacitance | Ciss | | 3247 | | PF | VGS = 0V VDS = 25V f = 1.0MHz | 3 |
| Output Capacitance | Coss | | 781 | | PF | VGS = 0V VDS = 25V f = 1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 211 | | PF | VGS = 0V VDS = 25V f = 1.0MHz | 3 |
| Turn-on Delay Time | td(ON) | | 14 | | ns | ID =62A, VDD =28V, VGS = 10V, RG =4.5Ω | 3 |
| Rise Time | tr | | 101 | | ns | ID =62A, VDD =28V, VGS = 10V, RG =4.5Ω | 3 |
| Turn-Off Delay Time | td(OFF) | | 50 | | ns | ID =62A, VDD =28V, VGS = 10V, RG =4.5Ω | 3 |
| Fall Time | tf | | 65 | | ns | ID =62A, VDD =28V, VGS = 10V, RG =4.5Ω | 3 |
| Total Gate Charge | Qg | | 146 | | nC | ID =62A, VDD =44V, VGS = 10V | 3 |
| Gate to Source Charge | Qgs | | 10 | | nC | ID =62A, VDD =44V, VGS = 10V | 3 |
| Gate to Drain (Miller) Charge | Qgd | | 17.5 | | nC | ID =62A, VDD =44V, VGS = 10V | 3 |
| Reverse Recovery Time | Trr | | 69 | | ns | IS=62A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | 4 |
| Reverse Recovery Charge | Qrr | | 143 | | nC | IS=62A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | 4 |
## CAD (KiCad official)
- Symbol: `MP3205`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `mp3205-etched.step` / `mp3205-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mp3205.step` / `mp3205.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Minos datasheet](docs/mp3205-datasheet.pdf) (10 pp, sha256 `ab22913348bfcc91`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mp3205-datasheet.pdf)