# MP175GS-Z

**Monolithic Power Systems** · AC-DC Controllers And Regulators · SOIC-8

MP175GS-Z from Monolithic Power Systems, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VCC | power_in | Control circuit power supply and feedback input for the fixed-output set-up; absolute maximum VCC to GND is -0.3V to 30V. |
| 2 | FB | input | Regulator feedback input; absolute maximum FB to GND is -0.3V to 6.5V, and the MOSFET turn-on threshold VFB is 2.31V to 2.53V. |
| 3 | GNDA | power_in | Analog ground, which is to be shorted to GNDP in the application. |
| 4 | GNDP | power_in | IC power ground. |
| 5 | DRAIN | passive | Internal power MOSFET drain and input of the high-voltage current source regulator; the MOSFET breakdown voltage V(BR)DSS is 700V minimum at TJ = 25°C. |
| 6 | DRAIN | passive | Internal power MOSFET drain and input of the high-voltage current source regulator; the MOSFET breakdown voltage V(BR)DSS is 700V minimum at TJ = 25°C. |
| 7 | DRAIN | passive | Internal power MOSFET drain and input of the high-voltage current source regulator; the MOSFET breakdown voltage V(BR)DSS is 700V minimum at TJ = 25°C. |
| 8 | DRAIN | passive | Internal power MOSFET drain and input of the high-voltage current source regulator; the MOSFET breakdown voltage V(BR)DSS is 700V minimum at TJ = 25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Monolithic Power Systems |
| Package | SOIC-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Internal current-source regulator supply current | Iregulator | 3 | 4.5 | 6 | mA | VCC = 4V, VDRAIN = 100V | 4 |
| DRAIN leakage current | ILeak |  |  | 40 | μA | VDRAIN = 400V | 4 |
| Breakdown voltage | V(BR)DSS | 700 |  |  | V | TJ = 25°C | 4 |
| On resistance | Ron |  | 4.5 | 6.5 | Ω | TJ = 25°C | 4 |
| VCC level (increasing) where the internal regulator turns off | VHVoff | 8.4 | 9 | 9.6 | V |  | 4 |
| VCC level (decreasing) where the internal regulator turns on | VHVon | 7.9 | 8.5 | 9.1 | V |  | 4 |
| VCC under-voltage lockout threshold | VCCL | 7 | 7.9 | 8.7 | V |  | 4 |
| VCC level (decreasing) where the protection phase ends | VCCpro |  | 3.5 | 4 | V |  | 4 |
| IC consumption | ICC |  | 920 | 1150 | μA | fs = 50kHz | 4 |
| IC consumption | ICC |  | 900 | 1050 | μA | MOSFET on | 4 |
| IC consumption | ICC | 220 | 310 | 400 | μA | MOSFET off | 4 |
| Internal IC consumption, under protection | ICCpro |  | 40 | 65 | μA |  | 4 |
| Regulating voltage | VCCref | 16.7 | 17.4 | 18.1 | V | FB open | 4 |
| Peak current limit | ILimit | 1.02 | 1.1 | 1.18 | A | TJ = 25°C | 4 |
| SCP threshold | ISCP | 135 | 155 | 175 | % ILimit | TJ = 25°C | 4 |
| Minimum off time | tminoff | 11.6 | 14 | 16.6 | μs |  | 4 |
| Maximum on time | tmaxon | 29.5 | 34 | 39.5 | μs |  | 4 |
| MOSFET turn-on threshold | VFB | 2.31 | 2.43 | 2.53 | V |  | 4 |
| Open-loop detection | VOLD | 0.2 | 0.3 | 0.4 | V |  | 4 |
| HV regulator on and off hysteresis |  |  | 200 |  | mV |  | 4 |
| Leading-edge blanking | tLEB1 |  | 310 |  | ns |  | 4 |
| Leading-edge blanking for SCP | tLEB2 |  | 250 |  | ns |  | 4 |
| Over-temperature protection threshold |  |  | 150 |  | °C |  | 4 |
| DRAIN to GND voltage |  | -0.3 |  | 700 | V |  | 3 |
| VCC to GND voltage |  | -0.3 |  | 30 | V |  | 3 |
| FB to GND voltage |  | -0.3 |  | 6.5 | V |  | 3 |
| Continuous power dissipation |  |  |  | 1.64 | W | SOIC-8, TA = +25°C | 3 |
| Junction temperature |  |  |  | 150 | °C |  | 3 |
| Lead temperature |  |  |  | 260 | °C |  | 3 |
| Storage temperature |  | -60 |  | 150 | °C |  | 3 |
| ESD capability, human body model |  |  |  | 2 | kV | human body mode | 3 |
| ESD capability, charged device model |  |  |  | 2 | kV | charged device model | 3 |
| Operating junction temperature | TJ | -40 |  | 125 | °C |  | 3 |
| Junction-to-ambient thermal resistance | θJA |  | 76 |  | °C/W | Measured on JESD51-7, 4-layer PCB | 3 |
| Junction-to-case thermal resistance | θJC |  | 35 |  | °C/W | Measured on JESD51-7, 4-layer PCB | 3 |

## CAD (KiCad official)

- Symbol: `MP175GS-Z`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `mp175gs-z-etched.step` / `mp175gs-z-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mp175gs-z.step` / `mp175gs-z.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Monolithic Power Systems datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590906262077333504) (19 pp, sha256 `60a0a06dd32682dc`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mp175gs-z-datasheet.pdf)