component
MP150N08
Public Made by Adomby adom
Minos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MP150N08
Minos · MOSFETs · TO-220
MP150N08 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum with a threshold of 2 V min to 4 V max at 250 µA. |
| 2 | D | passive | Drain, also connected to the metal tab; rated for 80 V drain-source and 150 A continuous drain current. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected to the body diode anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 80 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 150 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 823 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 259 | W | Tc=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 823 | mJ | Note 2 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.7 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 80 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=80V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 4 | 5 | mΩ | VGS=10V, ID=80A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=155A | 2 | ||
| Forward Transconductance | gFS | 180 | S | VDS=50V,ID=75A | 2 | ||
| Input Capacitance | Clss | 4115 | pF | VDS=30V,VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 570 | pF | VDS=30V,VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 395 | pF | VDS=30V,VGS=0V, f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 28 | nS | VDD=40V, ID=40A, VGS=10V,RGEN=3Ω | 2 | ||
| Turn-on Rise Time | tr | 20 | nS | VDD=40V, ID=40A, VGS=10V,RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 50 | nS | VDD=40V, ID=40A, VGS=10V,RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 23 | nS | VDD=40V, ID=40A, VGS=10V,RGEN=3Ω | 2 | ||
| Total Gate Charge | Qg | 69 | nC | VDS=40V,ID=40A,VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 23 | nC | VDS=40V,ID=40A,VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 22 | nC | VDS=40V,ID=40A,VGS=10V | 2 |
CAD (KiCad official)
- Symbol:
MP150N08 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
mp150n08-etched.step/mp150n08-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mp150n08.step/mp150n08.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (7 pp, sha256
0dd07ae3d00cbc47, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MP150N08
**Minos** · MOSFETs · TO-220
MP150N08 from Minos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum with a threshold of 2 V min to 4 V max at 250 µA. |
| 2 | D | passive | Drain, also connected to the metal tab; rated for 80 V drain-source and 150 A continuous drain current. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected to the body diode anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 80 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA=25℃ | 1 |
| Drain Current-Continuous | ID | | | 150 | A | TA=25℃ | 1 |
| Drain Current-Pulsed | IDM | | | 823 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD | | | 259 | W | Tc=25℃ | 1 |
| Single pulse avalanche energy | EAS | | | 823 | mJ | Note 2 | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 175 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Case | RθJC | | | 0.7 | ℃/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 80 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=80V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 4 | 5 | mΩ | VGS=10V, ID=80A | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=155A | 2 |
| Forward Transconductance | gFS | | 180 | | S | VDS=50V,ID=75A | 2 |
| Input Capacitance | Clss | | 4115 | | pF | VDS=30V,VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 570 | | pF | VDS=30V,VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 395 | | pF | VDS=30V,VGS=0V, f=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 28 | | nS | VDD=40V, ID=40A, VGS=10V,RGEN=3Ω | 2 |
| Turn-on Rise Time | tr | | 20 | | nS | VDD=40V, ID=40A, VGS=10V,RGEN=3Ω | 2 |
| Turn-Off Delay Time | td(off) | | 50 | | nS | VDD=40V, ID=40A, VGS=10V,RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf | | 23 | | nS | VDD=40V, ID=40A, VGS=10V,RGEN=3Ω | 2 |
| Total Gate Charge | Qg | | 69 | | nC | VDS=40V,ID=40A,VGS=10V | 2 |
| Gate-Source Charge | Qgs | | 23 | | nC | VDS=40V,ID=40A,VGS=10V | 2 |
| Gate-Drain Charge | Qgd | | 22 | | nC | VDS=40V,ID=40A,VGS=10V | 2 |
## CAD (KiCad official)
- Symbol: `MP150N08`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `mp150n08-etched.step` / `mp150n08-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mp150n08.step` / `mp150n08.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Minos datasheet](docs/mp150n08-datasheet.pdf) (7 pp, sha256 `0dd07ae3d00cbc47`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mp150n08-datasheet.pdf)