component
MOT90N03D
Public Made by Adomby adom
MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| mot90n03d-etched.glb | 17d ago |
| mot90n03d-etched.step | 17d ago |
| mot90n03d-hero.glb | 17d ago |
| mot90n03d-hero.overlay.json | 17d ago |
| mot90n03d.glb | 17d ago |
| mot90n03d.kicad_mod | 17d ago |
| mot90n03d.kicad_sym | 17d ago |
| mot90n03d.lbr | 17d ago |
| mot90n03d.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MOT90N03D
MOT · MOSFETs · TO-252
MOT90N03D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage is limited to ±20 V absolute maximum, with a threshold of 1 V minimum at ID = 250µA. |
| 2 | Drain | passive | Drain terminal (also the tab); drain-source voltage is rated 30 V with continuous drain current of 90 A at TC = 25°C. |
| 3 | Source | passive | Source terminal; continuous source-drain diode current is 80 A and pulsed is 320 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 30 | V | VGS = 0 | 1 | ||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Drain current (continuous) at TC = 25°C | ID | 90 | A | TC = 25°C; value limited by wire bonding | 1 | ||
| Drain current (continuous) at TC = 100°C | ID | 72 | A | TC = 100°C | 1 | ||
| Drain current (pulsed) | IDM | 320 | A | Pulse width limited by safe operating area | 1 | ||
| Total dissipation at TC = 25°C | PTOT | 95 | W | TC = 25°C | 1 | ||
| Derating factor | 0.63 | W/°C | 1 | ||||
| Single pulse avalanche energy | EAS | 350 | mJ | Starting Tj = 25°C, ID = 40A, VDD = 15V | 1 | ||
| Operating and storage junction temperature | TJ Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance junction-case, max | Rthj-case | 1.58 | °C/W | 1 | |||
| Thermal resistance junction-ambient, max | Rthj-amb | 100 | °C/W | 1 | |||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | ID = 250µA, VGS = 0 | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 30V | 2 | ||
| Zero gate voltage drain current at high temperature | IDSS | 10 | µA | VDS = 30V, Tc = 125°C | 2 | ||
| Gate body leakage current | IGSS | -100 | 100 | nA | VDS = 0, VGS = ±20V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | V | VDS = VGS, ID = 250µA | 2 | ||
| Static drain-source on resistance | RDS(on) | 4.2 | 5.5 | mΩ | VGS = 10V, ID = 40A | 2 | |
| Static drain-source on resistance | RDS(on) | 6.5 | 8 | mΩ | VGS = 4.5V, ID = 40A | 2 | |
| Total gate charge | Qg | 22 | 32 | nC | VDD = 15V, ID = 80A, VGS = 5V | 2 | |
| Forward on voltage | VSD | 1.3 | V | ISD = 40A, VGS = 0; pulsed: pulse duration = 300µs, duty cycle 1.5% | 2 | ||
| Source-drain current | ISD | 80 | A | 2 | |||
| Source-drain current (pulsed) | ISDM | 320 | A | Pulse width limited by safe operating area | 2 | ||
| Input capacitance | Ciss | 2805 | pF | VDS = 25V, f = 1MHz, VGS = 0 | 2 | ||
| Output capacitance | Coss | 549 | pF | VDS = 25V, f = 1MHz, VGS = 0 | 2 | ||
| Reverse transfer capacitance | Crss | 76 | pF | VDS = 25V, f = 1MHz, VGS = 0 | 2 | ||
| Gate-source charge | Qgs | 10 | nC | VDD = 15V, ID = 80A, VGS = 5V | 2 | ||
| Gate-drain charge | Qgd | 7 | nC | VDD = 15V, ID = 80A, VGS = 5V | 2 | ||
| Gate input resistance | RG | 1.2 | Ω | f = 1MHz, gate bias = 0, test signal | 2 | ||
| Turn-on delay time | td(on) | 19 | ns | VDD = 15V, ID = 40A, RG = 4.7Ω, VGS = 5V | 2 | ||
| Rise time | tr | 135 | ns | VDD = 15V, ID = 40A, RG = 4.7Ω, VGS = 5V | 2 | ||
| Turn-off delay time | td(off) | 24 | ns | VDD = 15V, ID = 40A, RG = 4.7Ω, VGS = 5V | 2 | ||
| Fall time | tf | 33 | ns | VDD = 15V, ID = 40A, RG = 4.7Ω, VGS = 5V | 2 | ||
| Reverse recovery time | trr | 36 | ns | ISD = 80A, di/dt = 100A/µs, VDD = 19V, Tj = 150°C | 2 | ||
| Reverse recovery charge | Qrr | 32 | µC | ISD = 80A, di/dt = 100A/µs, VDD = 19V, Tj = 150°C | 2 | ||
| Reverse recovery current | IRRM | 1.8 | A | ISD = 80A, di/dt = 100A/µs, VDD = 19V, Tj = 150°C | 2 |
CAD (KiCad official)
- Symbol:
MOT90N03D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot90n03d-etched.step/mot90n03d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot90n03d.step/mot90n03d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (6 pp, sha256
6d098c3b42d6594f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).