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MOT7N70D

Public Made by Adom

by adom

MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MOT7N70D

MOT · MOSFETs · TO-252

MOT7N70D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal; the datasheet rates VGS at ±30 V, with gate threshold 2.0 to 4.0 V at ID = 250 µA.
2 Drain passive Drain terminal of the N-channel MOSFET, rated 700 V drain-source (VDSS) and 7 A continuous drain current.
3 Source passive Source terminal and reference for VGS; body-diode continuous current is rated at 7 A and pulsed current at 14 A.

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGSS -30 30 V TC = 25°C, unless otherwise specified 1
Continuous Drain Current ID 7 A TC = 25°C, unless otherwise specified 1
Pulsed Drain Current IDM 14 A TC = 25°C, unless otherwise specified 1
Avalanche Energy Single Pulsed EAS 480 mJ TC = 25°C, unless otherwise specified 1
Peak Diode Recovery dv/dt dv/dt 2.2 V/ns TC = 25°C, unless otherwise specified 1
Power Dissipation PD 40 W TC = 25°C, unless otherwise specified 1
Junction Temperature TJ 150 °C TC = 25°C, unless otherwise specified 1
Storage Temperature Range TSTG -55 150 °C TC = 25°C, unless otherwise specified 1
Drain-Source Voltage VDSS 700 V TC = 25°C, unless otherwise specified 1
Drain-Source Breakdown Voltage BVDSS 700 V VGS=0V, ID=250µA 2
Drain-Source Leakage Current IDSS 1 uA VDS=700V, VGS=0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VDS=0V, VGS=30V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VDS=0V, VGS=-30V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250µA 2
Drain-Source On-State Resistance RDS(ON) 1.5 Ω VGS=10V, ID=3.5A 2
Input Capacitance CISS 868 pF VGS=0V, VDS=25V, f=1.0MHz 2
Output Capacitance COSS 125 pF VGS=0V, VDS=25V, f=1.0MHz 2
Reverse Transfer Capacitance CRSS 30 pF VGS=0V, VDS=25V, f=1.0MHz 2
Total Gate Charge QG 35 nC VDS=300V, VGS=10V, ID=7A, IG=1mA 2
Gate to Source Charge QGS 7.4 nC VDS=300V, VGS=10V, ID=7A, IG=1mA 2
Gate to Drain Charge QGD 12.6 nC VDS=300V, VGS=10V, ID=7A, IG=1mA 2
Turn-ON Delay Time tD(ON) 40 ns VDD=30V, VGS=10V, ID=0.5A, RG=25Ω 2
Rise Time tR 102 ns VDD=30V, VGS=10V, ID=0.5A, RG=25Ω 2
Turn-OFF Delay Time tD(OFF) 264 ns VDD=30V, VGS=10V, ID=0.5A, RG=25Ω 2
Fall-Time tF 172 ns VDD=30V, VGS=10V, ID=0.5A, RG=25Ω 2
Maximum Body-Diode Continuous Current IS 7 A 2
Maximum Body-Diode Pulsed Current ISM 14 A 2
Drain-Source Diode Forward Voltage SD 1.4 V IS=7.0A, VGS=0V 2
Body Diode Reverse Recovery Time rr 420 ns IS=7.0A, VGS=0V, dIF/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 4 μC IS=7.0A, VGS=0V, dIF/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: MOT7N70D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot7n70d-etched.step / mot7n70d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot7n70d.step / mot7n70d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (6 pp, sha256 0c0b1a5e23ead8b2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF