component
MOT7N65AD
Public Made by Adomby adom
MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MOT7N65AD
MOT · MOSFETs · TO-252
MOT7N65AD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±30 V (VGSS) with a gate threshold voltage VGS(TH) of 2.0 to 4.0 V at 250 µA. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 650 V (VDSS) and a continuous drain current of 7 A. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, through which the datasheet's body diode ratings apply (continuous forward current IS of 7 A and pulsed ISM of 29.6 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Avalanche Current (Note 2) | IAR | 7 | A | 1 | |||
| Drain Current Continuous | ID | 7 | A | 1 | |||
| Drain Current Pulsed (Note 2) | IDM | 29.6 | A | Pulse width limited by maximum junction temperature (Note 2) | 1 | ||
| Avalanche Energy Single Pulsed (Note 3) | EAS | 530 | mJ | Single pulsed (Note 3) | 1 | ||
| Avalanche Energy Repetitive (Note 2) | EAR | 14.2 | mJ | Repetitive (Note 2) | 1 | ||
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | V/ns | ISD≤7A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C (Note 4) | 1 | ||
| Power Dissipation TO-252/251 | PD | 120 | W | TO-252/251 | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0V, ID = 250μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS = 650V, VGS = 0V | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.3 | 1.5 | Ω | VGS = 10V, ID = 3.5A | 2 | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0V, IS = 7A | 2 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 7 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 29.6 | A | 2 | |||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.67 | V/°C | ID=250μA, Referenced to 25°C | 2 | ||
| Input Capacitance | CISS | 1400 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 | ||
| Output Capacitance | COSS | 180 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | CRSS | 16 | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 | ||
| Turn-On Delay Time | tD(ON) | 90 | ns | VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) | 2 | ||
| Turn-On Rise Time | tR | 120 | ns | VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 95 | ns | VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) | 2 | ||
| Turn-Off Fall Time | tF | 60 | ns | VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) | 2 | ||
| Total Gate Charge | QG | 29 | nC | VDS=520V, VGS=10 V (Note 1, 2) | 2 | ||
| Gate-Source Charge | QGS | 7 | nC | 2 | |||
| Gate-Drain Charge | QGD | 14.5 | nC | 2 | |||
| Reverse Recovery Time | trr | 320 | ns | VGS = 0V, IS = 7A, dIF / dt = 100A/μs (Note 1) | 2 | ||
| Reverse Recovery Charge | QRR | 2.4 | μC | 2 |
CAD (KiCad official)
- Symbol:
MOT7N65AD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot7n65ad-etched.step/mot7n65ad-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot7n65ad.step/mot7n65ad.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (7 pp, sha256
5a9798979f683fd2, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MOT7N65AD
**MOT** · MOSFETs · TO-252
MOT7N65AD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±30 V (VGSS) with a gate threshold voltage VGS(TH) of 2.0 to 4.0 V at 250 µA. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 650 V (VDSS) and a continuous drain current of 7 A. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, through which the datasheet's body diode ratings apply (continuous forward current IS of 7 A and pulsed ISM of 29.6 A). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Avalanche Current (Note 2) | IAR | | | 7 | A | | 1 |
| Drain Current Continuous | ID | | | 7 | A | | 1 |
| Drain Current Pulsed (Note 2) | IDM | | | 29.6 | A | Pulse width limited by maximum junction temperature (Note 2) | 1 |
| Avalanche Energy Single Pulsed (Note 3) | EAS | | | 530 | mJ | Single pulsed (Note 3) | 1 |
| Avalanche Energy Repetitive (Note 2) | EAR | | | 14.2 | mJ | Repetitive (Note 2) | 1 |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | | | 4.5 | V/ns | ISD≤7A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C (Note 4) | 1 |
| Power Dissipation TO-252/251 | PD | | | 120 | W | TO-252/251 | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS = 0V, ID = 250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 1 | μA | VDS = 650V, VGS = 0V | 2 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS = 30V, VDS = 0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | | | -100 | nA | VGS = -30V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 1.3 | 1.5 | Ω | VGS = 10V, ID = 3.5A | 2 |
| Drain-Source Diode Forward Voltage | VSD | | 1.4 | | V | VGS = 0V, IS = 7A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 7 | A | | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 29.6 | A | | 2 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | | 0.67 | | V/°C | ID=250μA, Referenced to 25°C | 2 |
| Input Capacitance | CISS | | 1400 | | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 |
| Output Capacitance | COSS | | 180 | | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 |
| Reverse Transfer Capacitance | CRSS | | 16 | | pF | VDS=25V, VGS=0V, f=1.0 MHz | 2 |
| Turn-On Delay Time | tD(ON) | | 90 | | ns | VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) | 2 |
| Turn-On Rise Time | tR | | 120 | | ns | VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) | 2 |
| Turn-Off Delay Time | tD(OFF) | | 95 | | ns | VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) | 2 |
| Turn-Off Fall Time | tF | | 60 | | ns | VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) | 2 |
| Total Gate Charge | QG | | 29 | | nC | VDS=520V, VGS=10 V (Note 1, 2) | 2 |
| Gate-Source Charge | QGS | | 7 | | nC | | 2 |
| Gate-Drain Charge | QGD | | 14.5 | | nC | | 2 |
| Reverse Recovery Time | trr | | 320 | | ns | VGS = 0V, IS = 7A, dIF / dt = 100A/μs (Note 1) | 2 |
| Reverse Recovery Charge | QRR | | 2.4 | | μC | | 2 |
## CAD (KiCad official)
- Symbol: `MOT7N65AD`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot7n65ad-etched.step` / `mot7n65ad-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot7n65ad.step` / `mot7n65ad.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MOT datasheet](docs/mot7n65ad-datasheet.pdf) (7 pp, sha256 `5a9798979f683fd2`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mot7n65ad-datasheet.pdf)