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MOT7N65AD

MOT · MOSFETs · TO-252

MOT7N65AD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±30 V (VGSS) with a gate threshold voltage VGS(TH) of 2.0 to 4.0 V at 250 µA.
2 Drain passive Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 650 V (VDSS) and a continuous drain current of 7 A.
3 Source passive Source terminal of the N-channel MOSFET, through which the datasheet's body diode ratings apply (continuous forward current IS of 7 A and pulsed ISM of 29.6 A).

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGSS -30 30 V 1
Avalanche Current (Note 2) IAR 7 A 1
Drain Current Continuous ID 7 A 1
Drain Current Pulsed (Note 2) IDM 29.6 A Pulse width limited by maximum junction temperature (Note 2) 1
Avalanche Energy Single Pulsed (Note 3) EAS 530 mJ Single pulsed (Note 3) 1
Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Repetitive (Note 2) 1
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns ISD≤7A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C (Note 4) 1
Power Dissipation TO-252/251 PD 120 W TO-252/251 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250μA 2
Drain-Source Leakage Current IDSS 1 μA VDS = 650V, VGS = 0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30V, VDS = 0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 1.3 1.5 Ω VGS = 10V, ID = 3.5A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0V, IS = 7A 2
Maximum Continuous Drain-Source Diode Forward Current IS 7 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 29.6 A 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.67 V/°C ID=250μA, Referenced to 25°C 2
Input Capacitance CISS 1400 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Output Capacitance COSS 180 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Reverse Transfer Capacitance CRSS 16 pF VDS=25V, VGS=0V, f=1.0 MHz 2
Turn-On Delay Time tD(ON) 90 ns VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) 2
Turn-On Rise Time tR 120 ns VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) 2
Turn-Off Delay Time tD(OFF) 95 ns VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) 2
Turn-Off Fall Time tF 60 ns VDD =325V, ID =7.4A, RG =25Ω (Note 1, 2) 2
Total Gate Charge QG 29 nC VDS=520V, VGS=10 V (Note 1, 2) 2
Gate-Source Charge QGS 7 nC 2
Gate-Drain Charge QGD 14.5 nC 2
Reverse Recovery Time trr 320 ns VGS = 0V, IS = 7A, dIF / dt = 100A/μs (Note 1) 2
Reverse Recovery Charge QRR 2.4 μC 2

CAD (KiCad official)

  • Symbol: MOT7N65AD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot7n65ad-etched.step / mot7n65ad-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot7n65ad.step / mot7n65ad.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (7 pp, sha256 5a9798979f683fd2, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF