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MOT7N50SD

Public Made by Adom

by adom

MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MOT7N50SD

MOT · MOSFETs · TO-252

MOT7N50SD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, with VGSS rated at ±30 V maximum.
2 Drain passive Drain terminal, rated for VDSS of 500 V and continuous drain current ID of 7 A.
3 Source passive Source terminal of the N-channel MOSFET, with body-diode continuous current IS of 7 A.

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 500 V VGS = 0V, ID = 250μA 2
Drain-Source Leakage Current IDSS 1 μA VDS = 500V, VGS = 0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30V, VDS = 0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 1.2 1.4 Ω VGS = 10V, ID = 3.5A 2
Drain-Source Diode Forward Voltage VSD 1.4 V IS = 7.0A, VGS = 0V 2
Maximum Body-Diode Continuous Current IS 7 A 2
Maximum Body-Diode Pulsed Current ISM 14 A 2
Input Capacitance CISS 641 pF VDS = 25V, VGS = 0V, f = 1.0 MHz 2
Output Capacitance COSS 85 pF VDS = 25V, VGS = 0V, f = 1.0 MHz 2
Reverse Transfer Capacitance CRSS 5 pF VDS = 25V, VGS = 0V, f = 1.0 MHz 2
Total Gate Charge (Note 1) QG 20 nC VDS = 100V, VGS = 10V, ID = 7A, ID = 1mA (Note 1, 2) 2
Gate-Source Charge QGS 7 nC 2
Gate-Drain Charge QGD 2.7 nC 2
Turn-On Delay Time (Note 1) tD(ON) 32 ns VDD = 100V, VGS = 10V, ID = 5A, RG = 25Ω (Note 1, 2) 2
Turn-On Rise Time tR 24 ns 2
Turn-Off Delay Time tD(OFF) 47 ns 2
Turn-Off Fall Time tF 39 ns 2
Body Diode Reverse Recovery Time trr 87 ns IS = 7.0A, VGS = 0V, di/dt = 100A/μs 2
Body Diode Reverse Recovery Charge Qrr 0.2 μC 2
Drain-Source Voltage VDSS 500 V TC = 25°C 1
Gate-Source Voltage VGSS -30 30 V TC = 25°C 1
Continuous Drain Current ID 7 A TC = 25°C 1
Pulsed Drain Current (Note 2) IDM 28 A Repetitive rating: pulse width limited by maximum junction temperature 1
Avalanche Energy Single Pulsed (Note 3) EAS 470 mJ VDD = 50V, RG = 25Ω, Starting TJ = 25°C 1
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns ISD ≤ 4.0A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 1
Power Dissipation PD 56 W TC = 25°C 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1

CAD (KiCad official)

  • Symbol: MOT7N50SD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot7n50sd-etched.step / mot7n50sd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot7n50sd.step / mot7n50sd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (7 pp, sha256 6f98376326b00530, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF