# MOT65R600D

**MOT** · MOSFETs · TO-252

MOT65R600D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage limit of ±30 V (VGSS). |
| 2 | Drain | passive | Drain of the N-channel MOSFET; the datasheet gives a drain-source voltage rating of 650 V (VDSS) and a continuous drain current of 7 A at TC = 25 ºC. |
| 3 | Source | passive | Source of the N-channel MOSFET; the datasheet gives a continuous body diode current IS of 6 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (VGS = 0V) | VDSS |  |  | 650 | V | VGS = 0V | 1 |
| Continuous Drain Current | ID |  |  | 7 | A | TC = 25ºC | 1 |
| Continuous Drain Current | ID |  |  | 4.2 | A | TC = 100ºC | 1 |
| Pulsed Drain Current (note 1) | IDM |  |  | 21 | A | note 1 | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy (note2) | EAS |  |  | 142 | mJ | note2 | 1 |
| Repetitive Avalanche Energy (note2) | EAR |  |  | 0.21 | mJ | note2 | 1 |
| Avalanche Current | IAR |  |  | 1.3 | A |  | 1 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns |  | 1 |
| Power Dissipation | PD |  |  | 63 | W |  | 1 |
| Continuous Body Diode Current | IS |  |  | 6 | A |  | 1 |
| Pulsed Diode Forward Current (note1) | ISM |  |  | 21 | A | note1 | 1 |
| Reverse diode dv/dt (note3) | dv/dt |  |  | 15 | V/ns | note3 | 1 |
| Maximum diode commutation speed (note3) | dif/dt |  |  | 500 | A/us | note3 | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 1 |
| Thermal resistance, junction-case max | R thjc |  |  | 2 | ℃ /W |  | 1 |
| Thermal resistance, junction-ambient max | R thja |  |  | 62 | ℃ /W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 650V, VGS = 0V, TJ = 25ºC | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | VDS = 650V, VGS = 0V, TJ = 150ºC | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±30V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 0.53 | 0.6 | Ω | VGS = 10V, ID = 3.5A | 2 |
| Body Diode Voltage | VSD |  | 0.9 | 1.2 | V | TJ = 25ºC, ISD = 3.5A, VGS = 0V | 2 |

## CAD (KiCad official)

- Symbol: `MOT65R600D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot65r600d-etched.step` / `mot65r600d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot65r600d.step` / `mot65r600d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603117069584527360) (7 pp, sha256 `22d9deba32988ece`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mot65r600d-datasheet.pdf)