# MOT65R380D

**MOT** · MOSFETs · TO-252

MOT65R380D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel super junction MOSFET; gate-source voltage is rated VGSS ±30 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; rated VDSS 650 V with continuous drain current ID of 11 A at TC = 25°C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; body diode forward current IS is rated 11 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Continuous drain current | ID |  |  | 11 | A | TC = 25°C | 1 |
| Continuous drain current | ID |  |  | 8.2 | A | TC = 100°C | 1 |
| Pulsed drain current | IDM |  |  | 30 | A |  | 1 |
| Gate-Source voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Avalanche energy, single pulse | EAS |  |  | 245 | mJ | single pulse | 1 |
| Avalanche current, repetitive | IAR |  |  | 11 | A |  | 1 |
| Power Dissipation | PD |  |  | 90 | W | TC = 25°C | 1 |
| Power Dissipation derating above 25°C | PD |  |  | 0.72 | W/°C | TC = 25°C | 1 |
| Power Dissipation (second rating row) | PD |  |  | 31.8 | W | TC = 25°C | 1 |
| Power Dissipation derating (second rating row) | PD |  |  | 0.26 | W/°C | TC = 25°C | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Continuous diode forward current | IS |  |  | 11 | A |  | 1 |
| Diode pulse current | IS,pulse |  |  | 30 | A |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 1.39 | °C/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 45 | °C/W |  | 1 |
| Drain-source breakdown voltage | BVDSS | 650 |  |  | V | VGS=0 V, ID=0.25 mA | 2 |
| Gate threshold voltage | VGS(th) | 2.5 | 3.5 | 4.5 | V | VDS=VGS, ID=0.25mA | 2 |
| Drain cut-off current | IDSS |  |  | 1 | μA | VDS=650 V, VGS=0 V, Tj = 25°C | 2 |
| Drain cut-off current | IDSS |  |  | 10 | μA | VDS=650 V, VGS=0 V, Tj = 125°C | 2 |
| Gate leakage current, Forward | IGSSF |  |  | 100 | nA | VGS=30 V, VDS=0 V | 2 |
| Gate leakage current, Reverse | IGSSR |  |  | -100 | nA | VGS=-30 V, VDS=0 V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 0.33 | 0.38 | Ω | VGS=10 V, ID=5.5 A, Tj = 25°C | 2 |

## CAD (KiCad official)

- Symbol: `MOT65R380D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot65r380d-etched.step` / `mot65r380d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot65r380d.step` / `mot65r380d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MOT datasheet](docs/mot65r380d-datasheet.pdf) (7 pp, sha256 `b4aa06a96f21e45e`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mot65r380d-datasheet.pdf)