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Ray Publish 0.1.0 428e79e 14d ago

MOT65R280F

MOT · MOSFETs · TO-220F

MOT65R280F from MOT, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage is rated at ±30 V (VGSS) and the gate-source threshold is 2.5 to 4.0 V.
2 Drain passive Drain terminal; drain-source voltage is rated at 650 V (VDSS) with continuous drain current of 15 A.
3 Source passive Source terminal; continuous body diode current is rated at 15 A (IS) with pulsed diode current of 45 A (ISM).

Key specifications

Parameter Value
Manufacturer MOT
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 650 V VGS = 0V, ID = 250µA 2
Gate-Source Threshold Voltage VGS(th) 2.5 4 V VDS = VGS, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 650V, VGS = 0V, TJ = 25ºC 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS = 650V, VGS = 0V, TJ = 150ºC 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±30V 2
Drain-Source On-Resistance RDS(on) 0.23 0.28 Ω VGS = 10V, ID = 7.5A 2
Continuous Body Diode Current IS 15 A TC = 25ºC 2
Pulsed Diode Forward Current ISM 45 A 2
Body Diode Voltage VSD 0.9 1.2 V TJ = 25ºC, ISD = 15A, VGS = 0V 2
Drain-Source Voltage VDSS 650 V VGS = 0V 1
Continuous Drain Current ID 15 A 1
Pulsed Drain Current IDM 45 A 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulse Avalanche Energy EAS 290 mJ 1
Avalanche Current IAS 2.4 A 1
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS = 0...480V 1
Reverse diode dv/dt dv/dt 15 V/ns VDS = 0…480V, ISD ≤ ID 1
Power Dissipation PD 32 W TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Thermal Resistance, Junction-to-Case RθJC 3.9 °C/W 1
Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W 1
Forward Transconductance gfs 10 S VDS = 10V, ID = 7.5A 2
Input Capacitance Ciss 1250 pF VGS = 0V, VDS = 50V, f = 1.0MHz 2
Output Capacitance Coss 81 pF 2
Reverse Transfer Capacitance Crss 7.1 pF 2
Total Gate Charge Qg 30 nC VDD = 520V, ID = 15A, VGS = 10V 2
Gate-Source Charge Qgs 9 nC 2
Gate-Drain Charge Qgd 10 nC 2
Turn-on Delay Time td(on) 42 ns VDD = 400V, ID = 15A, RG = 25Ω 2
Turn-on Rise Time tr 17 ns 2
Turn-off Delay Time td(off) 135 ns 2
Turn-off Fall Time tf 6 ns 2
Reverse Recovery Time trr 335 ns VR = 480V, IF = IS, diF/dt = 100A/μs 2
Reverse Recovery Charge Qrr 3.4 μC 2
Peak Reverse Recovery Current Irrm 20 A 2

CAD (KiCad official)

  • Symbol: MOT65R280F
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (7 pp, sha256 8d5acdb3dc274666, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF