# MOT65R280D

**MOT** · MOSFETs · TO-252

MOT65R280D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel super junction MOSFET, with gate-source voltage rated at ±30 V (VGSS). |
| 2 | Drain | passive | Drain terminal of the MOSFET, rated for a drain-source voltage of 650 V (VDSS) and continuous drain current of 15 A (ID). |
| 3 | Source | passive | Source terminal of the MOSFET; the body diode is rated for continuous current of 15 A (IS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V | VGS = 0V | 1 |
| Continuous Drain Current | ID |  |  | 15 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 45 | A |  | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 290 | mJ |  | 1 |
| Avalanche Current | IAS |  |  | 2.4 | A |  | 1 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS = 0...480V | 1 |
| Reverse diode dv/dt | dv/dt |  |  | 15 | V/ns | VDS = 0…480V, ISD ≤ ID | 1 |
| Power Dissipation | PD |  |  | 104 | W | TC = 25ºC | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ºC |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 650 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current (TJ = 25ºC) | IDSS |  |  | 1 | µA | VDS= 650V, VGS = 0V, TJ = 25ºC | 2 |
| Zero Gate Voltage Drain Current (TJ = 150ºC) | IDSS |  |  | 100 | µA | VDS= 650V, VGS= 0V, TJ= 150ºC | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±30V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) |  | 0.23 | 0.28 | Ω | VGS = 10V, ID = 7.5A | 2 |
| Continuous Body Diode Current | IS |  |  | 15 | A | TC = 25ºC | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 45 | A |  | 2 |
| Body Diode Voltage | VSD |  | 0.9 | 1.2 | V | TJ = 25ºC, ISD = 15A, VGS = 0V | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 1.2 |  | °C/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 62 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `MOT65R280D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot65r280d-etched.step` / `mot65r280d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot65r280d.step` / `mot65r280d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603116927468249088) (7 pp, sha256 `9c1aad1aa1dbc6a1`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mot65r280d-datasheet.pdf)