component
MOT6522D
Public Made by Adomby adom
MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MOT6522D
MOT · MOSFETs · TO-252
MOT6522D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage limited to ±20V. |
| 2 | Drain | passive | Drain terminal; drain-source voltage rated 60V and continuous drain current 35A at TC=25°C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TC=25℃ | 1 | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 3 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS,ID=250μA | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 15 | 22 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 19 | 26 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Forward Transconductance | gFS | 10 | S | VDS=10V,ID=5A | 2 | ||
| Input Capacitance | Ciss | 678 | PF | VDS=25V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 380 | PF | VDS=25V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 14 | PF | VDS=25V,VGS=0V, F=1.0MHz | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=10A | 2 | ||
| Diode Forward Current | IS | 35 | A | 2 |
CAD (KiCad official)
- Symbol:
MOT6522D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot6522d-etched.step/mot6522d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot6522d.step/mot6522d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (6 pp, sha256
60aeb6d8201d3beb, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MOT6522D
**MOT** · MOSFETs · TO-252
MOT6522D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage limited to ±20V. |
| 2 | Drain | passive | Drain terminal; drain-source voltage rated 60V and continuous drain current 35A at TC=25°C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 60 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | TC=25℃ | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 3 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V,VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 15 | 22 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 19 | 26 | mΩ | VGS=4.5V, ID=20A | 2 |
| Forward Transconductance | gFS | | 10 | | S | VDS=10V,ID=5A | 2 |
| Input Capacitance | Ciss | | 678 | | PF | VDS=25V,VGS=0V, F=1.0MHz | 2 |
| Output Capacitance | Coss | | 380 | | PF | VDS=25V,VGS=0V, F=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 14 | | PF | VDS=25V,VGS=0V, F=1.0MHz | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V,IS=10A | 2 |
| Diode Forward Current | IS | | | 35 | A | | 2 |
## CAD (KiCad official)
- Symbol: `MOT6522D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot6522d-etched.step` / `mot6522d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot6522d.step` / `mot6522d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MOT datasheet](docs/mot6522d-datasheet.pdf) (6 pp, sha256 `60aeb6d8201d3beb`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mot6522d-datasheet.pdf)