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Ray Publish 0.1.0 08d5b5e 6h ago

MOT5N65C

MOT · MOSFETs · TO-251

MOT5N65C from MOT, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage is rated VGSS ±30 V.
2 Drain passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated VDSS 650 V with continuous drain current ID 5 A and pulsed IDM 10 A.
3 Source passive Source terminal of the N-channel MOSFET; body-diode continuous current IS is 5 A and pulsed ISM is 10 A.

Key specifications

Parameter Value
Manufacturer MOT
Package TO-251
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGSS -30 30 V 1
Drain Current Continuous ID 5 A 1
Pulsed Drain Current IDM 10 A Pulsed (Note 2) 1
Avalanche Energy Single Pulsed EAS 112 mJ Single Pulsed (Note 3) 1
Peak Diode Recovery dv/dt dv/dt 3.2 V/ns Note 4 1
Power Dissipation TO-251/252 PD 54 W TO-251/252 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID= 250μA 2
Drain-Source Leakage Current IDSS 10 µA VDS=650V, VGS=0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250μA 2
Static Drain-Source On-State Resistance RDS(ON) 2.2 2.6 Ω VGS=10V, ID=2.5A 2
Input Capacitance CISS 623 pF VGS=0V, VDS=25V, f=1.0 MHz 2
Output Capacitance COSS 62 pF 2
Reverse Transfer Capacitance CRSS 2.9 pF 2
Total Gate Charge QG 15 nC VDS=100V, VGS=10V, ID=2.0A, IG=1mA (Note 1, 2) 2
Gate-Source Charge QGS 5.6 nC 2
Gate-Drain Charge QGD 2.5 nC 2
Turn-on Delay Time tD(ON) 4.4 ns VDS=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) 2
Rise Time tR 24 ns 2
Turn-off Delay Time tD(OFF) 122 ns 2
Fall-Time tF 25 ns 2
Maximum Body-Diode Continuous Current IS 5 A 2
Maximum Body-Diode Pulsed Current ISM 10 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS=0V, IS=5.0A (Note 1) 2
Reverse Recovery Time trr 328 ns VGS=0V, IS=5.0A, dIF/dt=100A/µs (Note1) 2
Reverse Recovery Charge Qrr 2.65 µC 2

CAD (KiCad official)

  • Symbol: MOT5N65C
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: mot5n65c-etched.step / mot5n65c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot5n65c.step / mot5n65c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (8 pp, sha256 8f3e921418a71b06, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF