component
MOT5N65C
Public Made by Adomby adom
MOT MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MOT5N65C
MOT · MOSFETs · TO-251
MOT5N65C from MOT, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated VGSS ±30 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated VDSS 650 V with continuous drain current ID 5 A and pulsed IDM 10 A. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; body-diode continuous current IS is 5 A and pulsed ISM is 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain Current Continuous | ID | 5 | A | 1 | |||
| Pulsed Drain Current | IDM | 10 | A | Pulsed (Note 2) | 1 | ||
| Avalanche Energy Single Pulsed | EAS | 112 | mJ | Single Pulsed (Note 3) | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 3.2 | V/ns | Note 4 | 1 | ||
| Power Dissipation TO-251/252 | PD | 54 | W | TO-251/252 | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID= 250μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS=650V, VGS=0V | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 2.2 | 2.6 | Ω | VGS=10V, ID=2.5A | 2 | |
| Input Capacitance | CISS | 623 | pF | VGS=0V, VDS=25V, f=1.0 MHz | 2 | ||
| Output Capacitance | COSS | 62 | pF | 2 | |||
| Reverse Transfer Capacitance | CRSS | 2.9 | pF | 2 | |||
| Total Gate Charge | QG | 15 | nC | VDS=100V, VGS=10V, ID=2.0A, IG=1mA (Note 1, 2) | 2 | ||
| Gate-Source Charge | QGS | 5.6 | nC | 2 | |||
| Gate-Drain Charge | QGD | 2.5 | nC | 2 | |||
| Turn-on Delay Time | tD(ON) | 4.4 | ns | VDS=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) | 2 | ||
| Rise Time | tR | 24 | ns | 2 | |||
| Turn-off Delay Time | tD(OFF) | 122 | ns | 2 | |||
| Fall-Time | tF | 25 | ns | 2 | |||
| Maximum Body-Diode Continuous Current | IS | 5 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 10 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=5.0A (Note 1) | 2 | ||
| Reverse Recovery Time | trr | 328 | ns | VGS=0V, IS=5.0A, dIF/dt=100A/µs (Note1) | 2 | ||
| Reverse Recovery Charge | Qrr | 2.65 | µC | 2 |
CAD (KiCad official)
- Symbol:
MOT5N65C - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
mot5n65c-etched.step/mot5n65c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot5n65c.step/mot5n65c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (8 pp, sha256
8f3e921418a71b06, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MOT5N65C
**MOT** · MOSFETs · TO-251
MOT5N65C from MOT, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated VGSS ±30 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated VDSS 650 V with continuous drain current ID 5 A and pulsed IDM 10 A. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; body-diode continuous current IS is 5 A and pulsed ISM is 10 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Drain Current Continuous | ID | | | 5 | A | | 1 |
| Pulsed Drain Current | IDM | | | 10 | A | Pulsed (Note 2) | 1 |
| Avalanche Energy Single Pulsed | EAS | | | 112 | mJ | Single Pulsed (Note 3) | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 3.2 | V/ns | Note 4 | 1 |
| Power Dissipation TO-251/252 | PD | | | 54 | W | TO-251/252 | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS=0V, ID= 250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 10 | µA | VDS=650V, VGS=0V | 2 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 2.2 | 2.6 | Ω | VGS=10V, ID=2.5A | 2 |
| Input Capacitance | CISS | | 623 | | pF | VGS=0V, VDS=25V, f=1.0 MHz | 2 |
| Output Capacitance | COSS | | 62 | | pF | | 2 |
| Reverse Transfer Capacitance | CRSS | | 2.9 | | pF | | 2 |
| Total Gate Charge | QG | | 15 | | nC | VDS=100V, VGS=10V, ID=2.0A, IG=1mA (Note 1, 2) | 2 |
| Gate-Source Charge | QGS | | 5.6 | | nC | | 2 |
| Gate-Drain Charge | QGD | | 2.5 | | nC | | 2 |
| Turn-on Delay Time | tD(ON) | | 4.4 | | ns | VDS=30V, VGS=10V, ID=0.5A, RG=25Ω (Note 1, 2) | 2 |
| Rise Time | tR | | 24 | | ns | | 2 |
| Turn-off Delay Time | tD(OFF) | | 122 | | ns | | 2 |
| Fall-Time | tF | | 25 | | ns | | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 5 | A | | 2 |
| Maximum Body-Diode Pulsed Current | ISM | | | 10 | A | | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.4 | V | VGS=0V, IS=5.0A (Note 1) | 2 |
| Reverse Recovery Time | trr | | 328 | | ns | VGS=0V, IS=5.0A, dIF/dt=100A/µs (Note1) | 2 |
| Reverse Recovery Charge | Qrr | | 2.65 | | µC | | 2 |
## CAD (KiCad official)
- Symbol: `MOT5N65C`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `mot5n65c-etched.step` / `mot5n65c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot5n65c.step` / `mot5n65c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603116921487577088) (8 pp, sha256 `8f3e921418a71b06`, retrieved 2026-11-06, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mot5n65c-datasheet.pdf)