# MOT5N50D

**MOT** · MOSFETs · TO-252

MOT5N50D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; gate-source voltage is rated ±30 V (VGSS). |
| 2 | Drain | passive | Drain of the N-channel MOSFET; drain-source voltage is rated 500 V (VDSS) with 5 A continuous drain current. |
| 3 | Source | passive | Source of the N-channel MOSFET; maximum continuous drain current is 5 A and pulsed drain current is 10 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 500 |  |  | V | ID=250µA, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=500V, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | µA | VDS=400V, TC=125°C | 2 |
| Gate-Source Leakage Current Forward | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | -100 |  |  | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 1.2 | 1.5 | Ω | VGS=10V, ID=2.5A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 5 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 20 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | IS=5A, VGS=0V | 2 |
| Reverse Recovery Time | trr |  |  | 240 | ns | IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) | 2 |
| Reverse Recovery Charge | QRR |  |  | 0.25 | uC | IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) | 2 |
| Drain-Source Voltage | VDSS |  |  | 500 | V |  | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Drain Current Continuous | ID |  |  | 5 | A | Continuous | 1 |
| Drain Current Pulsed | IDM |  |  | 10 | A | Pulsed (Note 2) | 1 |
| Avalanche Energy Single Pulsed | EAS |  |  | 151 | mJ | L=10mH, IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | ISD≤5.0A, di/dt≤100A/µs, VDD≤BVDSS, Starting TJ=25°C (Note 4) | 1 |
| Power Dissipation | PD |  |  | 50 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `MOT5N50D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot5n50d-etched.step` / `mot5n50d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot5n50d.step` / `mot5n50d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590298213455998977) (7 pp, sha256 `da2814617909d0b4`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mot5n50d-datasheet.pdf)