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Contents

README

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MOT5N50C

MOT · MOSFETs · TO-251

MOT5N50C from MOT, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; the datasheet limits gate-source voltage to ±30 V (VGSS absolute maximum rating).
2 Drain passive Drain terminal; the datasheet rates drain-source voltage at 500 V (VDSS) and continuous drain current at 5 A (ID, TC = 25°C).
3 Source passive Source terminal; the datasheet gives maximum continuous source-drain diode forward current of 5 A (IS) and pulsed 20 A (ISM).

Key specifications

Parameter Value
Manufacturer MOT
Package TO-251
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 500 V 1
Gate-Source Voltage VGSS -30 30 V 1
Drain Current Continuous ID 5 A TC = 25°C 1
Drain Current Pulsed IDM 10 A Pulsed, Note 2 1
Avalanche Energy Single Pulsed EAS 151 mJ L=10mH, IAS=5.5A, VDD=50V, RG=25Ω, starting TJ=25°C (Note 3) 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns ISD≤5.0A, di/dt≤100A/µs, VDD≤BVDSS, starting TJ=25°C (Note 4) 1
Power Dissipation PD 50 W 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 500 V ID=250µA, VGS=0V 2
Drain-Source Leakage Current IDSS 1 µA VDS=500V, VGS=0V 2
Drain-Source Leakage Current at 125°C IDSS 10 µA VDS=400V, TC=125°C 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250µA 2
Static Drain-Source On-State Resistance RDS(ON) 1.2 1.5 Ω VGS=10V, ID=2.5A 2
Maximum Continuous Drain-Source Diode Forward Current IS 5 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 20 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V IS=5A, VGS=0V 2
Reverse Recovery Time trr 240 ns IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) 2
Reverse Recovery Charge QRR 0.25 µC IS=5A, VGS=0V, dIF/dt=100A/µs (Note 1) 2

CAD (KiCad official)

  • Symbol: MOT5N50C
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: mot5n50c-etched.step / mot5n50c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot5n50c.step / mot5n50c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (7 pp, sha256 da2814617909d0b4, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF