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MOT5N50BD

Public Made by Adom

by adom

MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MOT5N50BD

MOT · MOSFETs · TO-252

MOT5N50BD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the datasheet specifies a gate-source voltage rating of ±30 V.
2 Drain passive Drain terminal of the N-channel MOSFET; the device is rated for 500 V drain-source voltage and 5 A continuous drain current at TC = 25°C.
3 Source passive Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit beyond the device ratings (VDSS 500 V, ID 5 A).

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 500 V TC = 25°C, unless otherwise specified 1
Gate-Source Voltage VGSS -30 30 V TC = 25°C, unless otherwise specified 1
Drain Current Continuous ID 5 A TC = 25°C, unless otherwise specified 1
Drain Current Pulsed IDM 15 A TC = 25°C, unless otherwise specified 1
Avalanche Energy Single Pulsed EAS 60 mJ TC = 25°C, unless otherwise specified 1
Power Dissipation PD 32.9 W TC = 25°C, unless otherwise specified 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Junction to Ambient θJA 62.5 °C/W 1
Junction to Case θJC 6.25 °C/W 1
Drain-Source Breakdown Voltage BVDSS 500 V ID=250µA, VGS=0V 2
Drain-Source Leakage Current IDSS 1 µA VDS=500V, VGS=0V 2
Drain-Source Leakage Current IDSS 10 µA VDS=400V, TC=125°C 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250µA 2
Static Drain-Source On-State Resistance RDS(ON) 2.4 3.2 Ω VGS=10V, ID=2.5A 2
Maximum Continuous Drain-Source Diode Forward Current IS 5 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 15 A 2
Drain-Source Diode Forward Voltage VSD 1.4 V IS=5A, VGS=0V 2
Breakdown Voltage Temperature Coefficient BVDSS/ΔTJ 0.5 V/°C Reference to 25°C, ID=250µA 2
Input Capacitance CISS 320 pF VGS=0V, VDS=25V, f=1.0MHz 2
Output Capacitance COSS 40 pF VGS=0V, VDS=25V, f=1.0MHz 2
Reverse Transfer Capacitance CRSS 8 pF VGS=0V, VDS=25V, f=1.0MHz 2
Total Gate Charge QG 18 nC VGS=10V, VDS=400V, ID=5A 2
Gate to Source Charge QGS 2.2 nC VGS=10V, VDS=400V, ID=5A 2
Gate to Drain Charge QGD 9.7 nC VGS=10V, VDS=400V, ID=5A 2
Turn-ON Delay Time tD(ON) 12 ns VDD=250V, ID=5A, RG=25Ω 2
Rise Time tR 46 ns VDD=250V, ID=5A, RG=25Ω 2
Turn-OFF Delay Time tD(OFF) 50 ns VDD=250V, ID=5A, RG=25Ω 2
Fall-Time tF 48 ns VDD=250V, ID=5A, RG=25Ω 2
Reverse Recovery Time trr 193 ns IS=5A, VGS=0V, dIF/dt=100A/µs 2
Reverse Recovery Charge QRR 0.25 uC IS=5A, VGS=0V, dIF/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: MOT5N50BD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot5n50bd-etched.step / mot5n50bd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot5n50bd.step / mot5n50bd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (6 pp, sha256 dca13686aedcfb0d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF