# MOT50N06D

**MOT** · MOSFETs · TO-252

MOT50N06D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of ±20 V (VGSS). |
| 2 | Drain | passive | Drain terminal, rated for 60 V drain-source voltage (VDSS) and 50 A continuous drain current (ID). |
| 3 | Source | passive | Source terminal, referenced to the gate-source rating of ±20 V (VGSS) and the 60 V drain-source voltage (VDSS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | μA | VDS=60V, VGS=0V | 2 |
| Gate-Source Leakage Current Forward | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | -100 |  |  | nA | VGS=-20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 1 |  | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 13 | 18 | mΩ | VGS=10V, ID=25A | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.5 | V | IS=50A, VGS=0V | 2 |
| Drain-Source Voltage | VDSS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 50 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 150 | A | Repetitive rating: pulse width limited by maximum junction temperature (Note 2) | 1 |
| Avalanche Energy Single Pulsed | EAS |  |  | 92 | mJ | L=43mH, IAS=43A, VDD=25V, RG=20Ω, Starting TJ=25°C (Note 3) | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 10 | V/ns | ISD ≤ 30A, VDS=0V, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C (Note 4) | 1 |
| Power Dissipation TO-251/TO-252 | PD |  |  | 46 | W |  | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Operation and Storage Temperature | TSTG | -55 |  | 150 | °C |  | 1 |

## CAD (KiCad official)

- Symbol: `MOT50N06D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot50n06d-etched.step` / `mot50n06d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot50n06d.step` / `mot50n06d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MOT datasheet](docs/mot50n06d-datasheet.pdf) (8 pp, sha256 `153bddd481c4a5a5`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mot50n06d-datasheet.pdf)