component
MOT4N70D
Public Made by Adomby adom
MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
MOT4N70D
MOT · MOSFETs · TO-252
MOT4N70D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of ±30 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for 700 V drain-source voltage and 4 A continuous drain current (16 A pulsed). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with a continuous body-diode forward current rating of 4 A (16 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 700 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 700 V, VGS = 0 V | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 2.6 | 2.8 | Ω | VGS = 10 V, ID = 2 A | 2 | |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.6 | V/°C | ID = 250 μA, referenced to 25 °C | 2 | ||
| Input Capacitance | CISS | 520 | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | COSS | 70 | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | CRSS | 8 | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Turn-On Delay Time | tD(ON) | 15 | ns | VDD = 350 V, ID = 4 A, RG = 25 Ω (Note 1, 2) | 2 | ||
| Turn-On Rise Time | tR | 45 | ns | VDD = 350 V, ID = 4 A, RG = 25 Ω (Note 1, 2) | 2 | ||
| Turn-Off Delay Time | tD(OFF) | 25 | ns | VDD = 350 V, ID = 4 A, RG = 25 Ω (Note 1, 2) | 2 | ||
| Turn-Off Fall Time | tF | 35 | ns | VDD = 350 V, ID = 4 A, RG = 25 Ω (Note 1, 2) | 2 | ||
| Total Gate Charge | QG | 15 | nC | VDS = 560 V, ID = 4 A, VGS = 10 V (Note 1, 2) | 2 | ||
| Gate-Source Charge | QGS | 3.4 | nC | 2 | |||
| Gate-Drain Charge | QGD | 7.1 | nC | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 4 A | 2 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 16 | A | 2 | |||
| Reverse Recovery Time | trr | 250 | ns | VGS = 0 V, IS = 4 A, dI/dt = 100 A/μs (Note 1) | 2 | ||
| Reverse Recovery Charge | QRR | 1.5 | μC | VGS = 0 V, IS = 4 A, dI/dt = 100 A/μs (Note 1) | 2 | ||
| Drain-Source Voltage | VDSS | 700 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Avalanche Current | IAR | 4 | A | (Note 2) | 1 | ||
| Drain Current Continuous | ID | 4 | A | 1 | |||
| Pulsed Drain Current | IDM | 16 | A | (Note 2) | 1 | ||
| Avalanche Energy Single Pulsed | EAS | 260 | mJ | L = 26.9 mH, IAS = 4 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25 °C (Note 3) | 1 | ||
| Avalanche Energy Repetitive | EAR | 10.6 | mJ | (Note 2) | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD ≤ 4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25 °C (Note 4) | 1 | ||
| Power Dissipation | PD | 49 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
MOT4N70D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot4n70d-etched.step/mot4n70d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot4n70d.step/mot4n70d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (7 pp, sha256
3bd96335e9d125d4, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MOT4N70D
**MOT** · MOSFETs · TO-252
MOT4N70D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of ±30 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for 700 V drain-source voltage and 4 A continuous drain current (16 A pulsed). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with a continuous body-diode forward current rating of 4 A (16 A pulsed). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 700 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS = 700 V, VGS = 0 V | 2 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS = 30 V, VDS = 0 V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | | | -100 | nA | VGS = -30 V, VDS = 0 V | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 2.6 | 2.8 | Ω | VGS = 10 V, ID = 2 A | 2 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.6 | | V/°C | ID = 250 μA, referenced to 25 °C | 2 |
| Input Capacitance | CISS | | 520 | | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | COSS | | 70 | | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | CRSS | | 8 | | pF | VDS = 25 V, VGS = 0 V, f = 1 MHz | 2 |
| Turn-On Delay Time | tD(ON) | | 15 | | ns | VDD = 350 V, ID = 4 A, RG = 25 Ω (Note 1, 2) | 2 |
| Turn-On Rise Time | tR | | 45 | | ns | VDD = 350 V, ID = 4 A, RG = 25 Ω (Note 1, 2) | 2 |
| Turn-Off Delay Time | tD(OFF) | | 25 | | ns | VDD = 350 V, ID = 4 A, RG = 25 Ω (Note 1, 2) | 2 |
| Turn-Off Fall Time | tF | | 35 | | ns | VDD = 350 V, ID = 4 A, RG = 25 Ω (Note 1, 2) | 2 |
| Total Gate Charge | QG | | 15 | | nC | VDS = 560 V, ID = 4 A, VGS = 10 V (Note 1, 2) | 2 |
| Gate-Source Charge | QGS | | 3.4 | | nC | | 2 |
| Gate-Drain Charge | QGD | | 7.1 | | nC | | 2 |
| Drain-Source Diode Forward Voltage | VSD | | 1.4 | | V | VGS = 0 V, IS = 4 A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 4 | A | | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 16 | A | | 2 |
| Reverse Recovery Time | trr | | 250 | | ns | VGS = 0 V, IS = 4 A, dI/dt = 100 A/μs (Note 1) | 2 |
| Reverse Recovery Charge | QRR | | 1.5 | | μC | VGS = 0 V, IS = 4 A, dI/dt = 100 A/μs (Note 1) | 2 |
| Drain-Source Voltage | VDSS | | | 700 | V | | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Avalanche Current | IAR | | | 4 | A | (Note 2) | 1 |
| Drain Current Continuous | ID | | | 4 | A | | 1 |
| Pulsed Drain Current | IDM | | | 16 | A | (Note 2) | 1 |
| Avalanche Energy Single Pulsed | EAS | | | 260 | mJ | L = 26.9 mH, IAS = 4 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25 °C (Note 3) | 1 |
| Avalanche Energy Repetitive | EAR | | | 10.6 | mJ | (Note 2) | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | ISD ≤ 4 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25 °C (Note 4) | 1 |
| Power Dissipation | PD | | | 49 | W | | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Operating Temperature | TOPR | -55 | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
## CAD (KiCad official)
- Symbol: `MOT4N70D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot4n70d-etched.step` / `mot4n70d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot4n70d.step` / `mot4n70d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590297248983506944) (7 pp, sha256 `3bd96335e9d125d4`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mot4n70d-datasheet.pdf)