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MOT4N65F

Public Made by Adom

by adom

MOT MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

MOT4N65F

MOT · MOSFETs · TO-220F

MOT4N65F from MOT, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±30 V.
2 Drain passive Drain terminal of the N-channel MOSFET, rated for a drain-source voltage VDSS of 650 V.
3 Source passive Source terminal of the N-channel MOSFET, the reference for the ±30 V gate-source rating.

Key specifications

Parameter Value
Manufacturer MOT
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGSS -30 30 V 1
Drain Current Continuous ID 4 A 1
Drain Current Pulsed IDM 16 A Pulsed (Note 2) 1
Avalanche Energy Single Pulsed EAS 260 mJ Note 3 1
Avalanche Energy Repetitive EAR 10.6 mJ Note 2 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 4 1
Power Dissipation PD 106 W TO-220 1
Junction Temperature TJ 150 °C 1
Operating Temperature OPR -55 150 °C 1
Storage Temperature STG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 250μA 2
Drain-Source Leakage Current IDSS 10 μA VDS = 650 V, VGS = 0 V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 2.8 Ω VGS = 10 V, ID 2
Maximum Continuous Drain-Source Diode Forward Current IS 4.4 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 17.6 A 2
Reverse Recovery Time trr 250 ns VGS = 0V, IS = 4.0A, dIF/dt = 100 A/μs (Note 1) 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.6 V/°C ID=250μA, Referenced to 25°C 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 4.0A 2
Input Capacitance CISS 520 pF VDS = 25 V, VGS = 0V, f = 1MHz 2
Output Capacitance COSS 70 pF VDS = 25 V, VGS = 0V, f = 1MHz 2
Reverse Transfer Capacitance CRSS 13 pF VDS = 25 V, VGS = 0V, f = 1MHz 2
Turn-Off Delay Time tD(OFF) 25 ns VDD = 325V, ID = 4.0A, RG = 25Ω (Note 1, 2) 2
Total Gate Charge QG 15 nC VDS= 520V, ID, VGS= 10V (Note 1, 2) 2
Gate-Source Charge QGS 3.4 nC 2
Gate-Drain Charge QGD 7.1 nC 2
Reverse Recovery Charge QRR 1.5 μC dIF/dt = 100 A/μs (Note 1) 2

CAD (KiCad official)

  • Symbol: MOT4N65F
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (8 pp, sha256 51990b4e85ea5d74, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF