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MOT2N65D

MOT · MOSFETs · TO-252

MOT2N65D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel MOSFET; the datasheet gives a gate-source voltage rating of ±30 V.
2 Drain passive Drain of the N-channel MOSFET; the datasheet gives a drain-source voltage rating VDSS of 650 V and a continuous drain current of 2.0 A.
3 Source passive Source of the N-channel MOSFET, the reference terminal for the gate-source voltage rating of ±30 V.

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250μA 2
Drain-Source Leakage Current IDSS 10 μA VDS = 650V, VGS = 0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30V, VDS = 0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 4.3 6 Ω VGS = 10V, ID =1A 2
Input Capacitance CISS 240 pF VDS =25V, VGS =0V, f =1MHz 2
Output Capacitance COSS 35 pF VDS =25V, VGS =0V, f =1MHz 2
Reverse Transfer Capacitance CRSS 4.6 pF VDS =25V, VGS =0V, f =1MHz 2
Turn-On Delay Time tD(ON) 40 ns VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) 2
Turn-On Rise Time tR 40 ns VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) 2
Turn-Off Delay Time tD(OFF) 50 ns VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) 2
Turn-Off Fall Time tF 22 ns VDD =30V, ID =0.5A, RG=25Ω (Note 1, 2) 2
Total Gate Charge QG 12 nC VDS=50V, VGS=10V, ID=1.3A (Note 1, 2) 2
Gate-Source Charge QGS 5.2 nC VDS=50V, VGS=10V, ID=1.3A (Note 1, 2) 2
Gate-Drain Charge QGD 2 nC VDS=50V, VGS=10V, ID=1.3A (Note 1, 2) 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, ISD = 2.0 A 2
Continuous Drain-Source Current ISD 2 A 2
Pulsed Drain-Source Current ISM 8 A 2
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGSS -30 30 V 1
Avalanche Current IAR 2 A Repetitive rating, pulse width limited by TJ (Note 2) 1
Continuous Drain Current ID 2 A TC = 25°C 1
Pulsed Drain Current IDM 8 A Note 2 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C (Note 4) 1
Power Dissipation TO-251/TO-252 PD 44 W 1
Junction Temperature TJ 150 °C 1
Operating Temperature TOPR -55 150 °C 1

CAD (KiCad official)

  • Symbol: MOT2N65D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot2n65d-etched.step / mot2n65d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot2n65d.step / mot2n65d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (7 pp, sha256 58eee2c8ee7b95de, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF