component

MOT2N65C

Public Made by Adom

by adom

MOT MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistormot2n65cfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 12d ago
viewers mot2n65c: viewers · Ray 12d ago
mot2n65c-etched.glb Publish 0.1.0 · Ray 12d ago
mot2n65c-etched.step mot2n65c: factory component page (tier=lcsc) · Ray 12d ago
mot2n65c-hero.glb mot2n65c: hero GLB from the etched model (keeps the MPN mark) · Ray 12d ago
mot2n65c-hero.overlay.json Publish 0.1.0 · Ray 12d ago
mot2n65c.glb Publish 0.1.0 · Ray 12d ago
mot2n65c.kicad_mod Publish 0.1.0 · Ray 12d ago
mot2n65c.kicad_sym Publish 0.1.0 · Ray 12d ago
mot2n65c.lbr Publish 0.1.0 · Ray 12d ago
mot2n65c.step Publish 0.1.0 · Ray 12d ago
package.json Publish 0.1.0 · Ray 12d ago
page.json Set visibility: public · Ray 12d ago
README.md Publish 0.1.0 · Ray 12d ago

MOT2N65C

MOT · MOSFETs · TO-251

MOT2N65C from MOT, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±30 V per the absolute maximum ratings.
2 Drain passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated 650 V (VDSS).
3 Source passive Source terminal of the N-channel MOSFET, the reference for the ±30 V gate-source voltage rating.

Key specifications

Parameter Value
Manufacturer MOT
Package TO-251
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGSS -30 30 V 1
Continuous Drain Current ID 2 A 1
Pulsed Drain Current IDM 8 A 1
Avalanche Current IAR 2 A 1
Avalanche Energy Single Pulsed EAS 110 mJ 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns 1
Power Dissipation TO-251/TO-252 PD 44 W 1
Junction Temperature TJ 150 °C 1
Operating Temperature OPR -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250μA 2
Drain-Source Leakage Current IDSS 10 μA VDS = 650V, VGS = 0V 2
Forward Gate-Source Leakage Current IGSS 100 nA VGS = 30V, VDS = 0V 2
Reverse Gate-Source Leakage Current IGSS -100 nA VGS = -30V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 4.3 6 Ω VGS = 10V, ID =1A 2
Continuous Drain-Source Current ISD 2 A 2
Pulsed Drain-Source Current ISM 8 A 2

CAD (KiCad official)

  • Symbol: MOT2N65C
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: mot2n65c-etched.step / mot2n65c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot2n65c.step / mot2n65c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (7 pp, sha256 58eee2c8ee7b95de, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF