# MOT20N65HF

**MOT** · MOSFETs · TO-220F

MOT20N65HF from MOT, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage of ±30 V (VGSS) with gate threshold VGS(TH) of 2.0 to 4.0 V. |
| 2 | Drain | passive | Drain terminal, rated for a drain-source voltage of 650 V (VDSS) and a continuous drain current of 20 A (pulsed 40 A). |
| 3 | Source | passive | Source terminal, with body-diode continuous current rated at 20 A (pulsed 40 A, ISM). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V | TC=25°C | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V | TC=25°C | 1 |
| Drain Current Continuous | ID |  |  | 20 | A | TC=25°C | 1 |
| Pulsed Drain Current | IDM |  |  | 40 | A | Repetitive, pulse width limited by max junction temperature (Note 2) | 1 |
| Avalanche Energy Single Pulsed | EAS |  |  | 562 | mJ | L=10mH, IAS=10.5A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 2.46 | V/ns | ISD≤20A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C (Note 4) | 1 |
| Power Dissipation (TO-220F) | PD |  |  | 65 | W | TO-220F package | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250μA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | µA | VDS=650V, VGS=0V | 2 |
| Gate-Source Leakage Current Forward | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | -100 |  |  | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) |  |  | 0.45 | Ω | VGS=10V, ID=10A | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 20 | A |  | 2 |
| Maximum Body-Diode Pulsed Current | ISM |  |  | 40 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS=0V, IS=20A | 2 |

## CAD (KiCad official)

- Symbol: `MOT20N65HF`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MOT datasheet](docs/mot20n65hf-datasheet.pdf) (8 pp, sha256 `e00537aa80421c0d`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mot20n65hf-datasheet.pdf)