component
MOT20N50A
Public Made by Adomby adom
MOT MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 10d ago |
| viewers | 10d ago |
| mot20n50a-etched.glb | 10d ago |
| mot20n50a-etched.step | 10d ago |
| mot20n50a-hero.glb | 10d ago |
| mot20n50a-hero.overlay.json | 10d ago |
| mot20n50a.glb | 10d ago |
| mot20n50a.kicad_mod | 10d ago |
| mot20n50a.kicad_sym | 10d ago |
| mot20n50a.lbr | 10d ago |
| mot20n50a.step | 10d ago |
| package.json | 10d ago |
| page.json | 10d ago |
| README.md | 10d ago |
MOT20N50A
MOT · MOSFETs · TO-220
MOT20N50A from MOT, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±30 V (absolute maximum). |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 500 V (BVDSS) and continuous drain current at 20 A (TC = 25°C). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET and reference for the gate drive; body-diode continuous current is rated at 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 500 | V | ID=250µA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250µA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.22 | 0.26 | Ω | VGS=10V, ID=10A | 2 | |
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 20 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 80 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=20A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDSS | 500 | V | TC=25°C | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC=25°C | 1 | |
| Drain Current Continuous | ID | 20 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | Pulse width limited by maximum junction temperature (Note 2) | 1 | ||
| Avalanche Energy, single pulse | EAS | 1000 | mJ | Single Pulsed, L=10mH, IAS=14A, VDD=50V, RG=25Ω, Starting TJ=25°C (Note 3) | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 2.2 | V/ns | ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ=25°C (Note 4) | 1 | ||
| Power Dissipation TO-220 | PD | 200 | W | TO-220 package | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Junction to Ambient TO-220 | θJA | 62.5 | °C/W | TO-220/TO-220F | 1 | ||
| Junction to Case TO-220 | θJC | 0.625 | °C/W | TO-220 | 1 |
CAD (KiCad official)
- Symbol:
MOT20N50A - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
mot20n50a-etched.step/mot20n50a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot20n50a.step/mot20n50a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (8 pp, sha256
637c9e1a0ae7c4e3, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).