component
MOT16N65HF
Public Made by Adomby adom
MOT MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MOT16N65HF
MOT · MOSFETs · TO-220F
MOT16N65HF from MOT, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage is rated ±30 V (VGSS) per the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal; drain-source voltage is rated 650 V (VDSS) with continuous drain current of 16 A at TC = 25°C. |
| 3 | Source | passive | Source terminal; maximum body-diode continuous current is 16 A (IS) and pulsed current is 64 A (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 16 | A | TC=25°C (Note 2) | 1 | ||
| Pulsed Drain Current | IDM | 64 | A | Note 3 | 1 | ||
| Avalanche Current | IAR | 16 | A | Note 3 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 780 | mJ | Note 4 | 1 | ||
| Repetitive Avalanche Energy | EAR | 20 | mJ | Note 5 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 5 | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250µA, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V | 2 | ||
| Drain-Source Leakage Current at 125°C | IDSS | 10 | µA | VDS=520V, VGS=0V, TC=125°C | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250µA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 0.55 | 0.6 | Ω | VGS=10V, ID=8A | 2 | |
| Input Capacitance | CISS | 1078 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Output Capacitance | COSS | 225 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | CRSS | 10 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Turn-ON Delay Time | tD(ON) | 112 | ns | VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) | 2 | ||
| Rise Time | tR | 186 | ns | VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) | 2 | ||
| Turn-OFF Delay Time | tD(OFF) | 335 | ns | VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) | 2 | ||
| Fall Time | tF | 186 | ns | VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) | 2 | ||
| Total Gate Charge | QG | 57 | nC | 2 | |||
| Gate to Source Charge | QGS | 15.4 | nC | 2 | |||
| Gate to Drain Charge | QGD | 15.8 | nC | VGS=10V, VDS=50V, ID=1.3A (Note 1, 2) | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 16 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 64 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | IS=16A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
MOT16N65HF - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (6 pp, sha256
a8d22b5d1f079740, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed (audit)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MOT16N65HF
**MOT** · MOSFETs · TO-220F
MOT16N65HF from MOT, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage is rated ±30 V (VGSS) per the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal; drain-source voltage is rated 650 V (VDSS) with continuous drain current of 16 A at TC = 25°C. |
| 3 | Source | passive | Source terminal; maximum body-diode continuous current is 16 A (IS) and pulsed current is 64 A (ISM). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 1 |
| Continuous Drain Current | ID | | | 16 | A | TC=25°C (Note 2) | 1 |
| Pulsed Drain Current | IDM | | | 64 | A | Note 3 | 1 |
| Avalanche Current | IAR | | | 16 | A | Note 3 | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 780 | mJ | Note 4 | 1 |
| Repetitive Avalanche Energy | EAR | | | 20 | mJ | Note 5 | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | Note 5 | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | ID=250µA, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS | | 1 | | µA | VDS=650V, VGS=0V | 2 |
| Drain-Source Leakage Current at 125°C | IDSS | | 10 | | µA | VDS=520V, VGS=0V, TC=125°C | 2 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250µA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 0.55 | 0.6 | Ω | VGS=10V, ID=8A | 2 |
| Input Capacitance | CISS | | 1078 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Output Capacitance | COSS | | 225 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | CRSS | | 10 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Turn-ON Delay Time | tD(ON) | | 112 | | ns | VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) | 2 |
| Rise Time | tR | | 186 | | ns | VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) | 2 |
| Turn-OFF Delay Time | tD(OFF) | | 335 | | ns | VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) | 2 |
| Fall Time | tF | | 186 | | ns | VDS=30V, ID=0.5A, RG=25Ω (Note 1, 2) | 2 |
| Total Gate Charge | QG | | 57 | | nC | | 2 |
| Gate to Source Charge | QGS | | 15.4 | | nC | | 2 |
| Gate to Drain Charge | QGD | | 15.8 | | nC | VGS=10V, VDS=50V, ID=1.3A (Note 1, 2) | 2 |
| Maximum Body-Diode Continuous Current | IS | | 16 | | A | | 2 |
| Maximum Body-Diode Pulsed Current | ISM | | 64 | | A | | 2 |
| Drain-Source Diode Forward Voltage | VSD | | 1.4 | | V | IS=16A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `MOT16N65HF`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MOT datasheet](docs/mot16n65hf-datasheet.pdf) (6 pp, sha256 `a8d22b5d1f079740`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed (audit)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mot16n65hf-datasheet.pdf)