# MOT16N50HSF

**MOT** · MOSFETs · TO-220F

MOT16N50HSF from MOT, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet rates the gate-to-source voltage at ±30 V. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; the drain-to-source voltage is rated at 500 V (minimum BVDSS 500 V at ID = 250 µA, VGS = 0 V). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the continuous source current is rated at 15 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS |  |  | 500 | V |  | 1 |
| Gate to Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 16 | A | TC = 25°C | 1 |
| Pulsed Drain Current | IDM |  |  | 64 | A | Pulsed (Note 2) | 1 |
| Avalanche Current | IAR |  |  | 16 | A | Note 2 | 1 |
| Avalanche Energy Single Pulsed | EAS |  |  | 637 | mJ | Note 3: L=5.23mH, IAS=15A, VDD=50V, RG=25Ω, Starting TJ=25°C | 1 |
| Avalanche Energy Repetitive | EAR |  |  | 25 | mJ | Note 2 | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | Note 4: ISD ≤15A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 1 |
| Drain to Source Breakdown Voltage | BVDSS | 500 |  |  | V | ID = 250µA, VGS = 0V | 2 |
| Drain to Source On-Resistance | rDS(ON) |  | 0.38 | 0.45 | Ω | VGS = 10V, ID = 8A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3.4 | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 25 | µA | VDS = 500V, TC = 25oC, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 250 | µA | VDS = 500V, TC = 150oC, VGS = 0V | 2 |
| Gate to Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS = ±30V | 2 |
| Forward Transconductance | gfs | 10 |  |  | S | VDD = 10V, ID | 2 |
| Total Gate Charge at 10V | Qg(TOT) |  | 33 | 41 | nC | VGS = 10V, VDS = 400V, ID = 16A | 2 |
| Single Pulse Avalanche Energy | EAS | 760 |  |  | mJ | Starting TJ = 25°C, L = 7.0mH, IAS = 15A | 2 |
| Avalanche Current | IAR |  |  | 16 | A |  | 2 |
| Continuous Source Current | IS |  |  | 15 | A |  | 2 |
| Pulsed Source Current | ISM |  |  | 64 | A |  | 2 |
| Source to Drain Diode Voltage | VSD |  | 0.86 | 1.2 | V | ISD = 16A | 2 |
| Reverse Recovery Time | trr |  | 470 | 730 | ns | ISD = 16A, diSD/dt = 100A/µs | 2 |
| Reverse Recovered Charge | QRR |  | 5 | 6.6 | µC | ISD = 16A, diSD/dt = 100A/µs | 2 |

## CAD (KiCad official)

- Symbol: `MOT16N50HSF`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603116925220237312) (6 pp, sha256 `e5b8c86d55d00a98`, retrieved 2026-11-06, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mot16n50hsf-datasheet.pdf)