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MOT10N65F

Public Made by Adom

by adom

MOT MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

MOT10N65F

MOT · MOSFETs · TO-220F

MOT10N65F from MOT, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; the datasheet rates gate-source voltage VGSS at ±30 V.
2 Drain passive Drain terminal of the MOSFET; the datasheet rates drain-source voltage VDSS at 650 V and continuous drain current ID at 10 A.
3 Source passive Source terminal of the MOSFET; the datasheet gives no pin-specific limit, only the device ratings (VDSS 650 V, VGSS ±30 V).

Key specifications

Parameter Value
Manufacturer MOT
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250µA 2
Drain-Source Leakage Current IDSS 1 µA VDS = 650V, VGS = 0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-State Resistance RDS(ON) 0.86 Ω VGS = 10V, ID 2
Maximum Continuous Drain-Source Diode Forward Current IS 10 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 38 A 2
Drain-Source Voltage VDSS 650 V TC = 25°C unless otherwise specified 1
Gate-Source Voltage VGSS -30 30 V TC = 25°C unless otherwise specified 1
Avalanche Current IAR 10 A Note 2 1
Drain Current Continuous ID 10 A TC = 25°C unless otherwise specified 1
Drain Current Pulsed IDM 38 A Note 2 1
Avalanche Energy Single Pulsed EAS 720 mJ Note 3 1
Avalanche Energy Repetitive EAR 15.6 mJ Note 2 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 4 1
Power Dissipation TO-220 PD 156 W TC = 25°C unless otherwise specified 1
Junction Temperature TJ 150 °C 1
Operating Temperature TOPR -55 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Thermal Resistance Junction to Case RθJC 2.5 °C/W Transient thermal response, Z θJC(t) max 6
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ 0.7 V/°C ID = 250 µA, Referenced to 25°C 2
Input Capacitance CISS 1570 pF VDS = 25V, VGS = 0V, f = 1.0 MHz 2
Output Capacitance COSS 166 pF VDS = 25V, VGS = 0V, f = 1.0 MHz 2
Reverse Transfer Capacitance CRSS 18 pF VDS = 25V, VGS = 0V, f = 1.0 MHz 2
Turn-On Delay Time tD(ON) 23 ns VDD = 325V, ID = 10A, RG = 25Ω (Note 1, 2) 2
Turn-On Rise Time tR 69 ns VDD = 325V, ID = 10A, RG = 25Ω (Note 1, 2) 2
Turn-Off Delay Time tD(OFF) 144 ns VDD = 325V, ID = 10A, RG = 25Ω (Note 1, 2) 2
Turn-Off Fall Time tF 77 ns VDD = 325V, ID = 10A, RG = 25Ω (Note 1, 2) 2
Total Gate Charge QG 44 nC VDS = 520V, ID = 10A, VGS = 10 V (Note 1, 2) 2
Gate-Source Charge QGS 6.7 nC 2
Gate-Drain Charge QGD 18.5 nC 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 10A 2
Reverse Recovery Time trr 420 ns VGS = 0 V, IS = 10A, dIF/dt = 100 A/µs (Note 1) 2
Reverse Recovery Charge QRR 4.2 µC VGS = 0 V, IS = 10A, dIF/dt = 100 A/µs (Note 1) 2

CAD (KiCad official)

  • Symbol: MOT10N65F
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (8 pp, sha256 5719fc91962452c1, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF