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Generated by kicad-footprint-generator · KiCad file format 20260206

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mot10n65d-etched.step	mot10n65d: factory component page (tier=lcsc) · Ray	23d ago
mot10n65d-hero.glb	mot10n65d: hero GLB from the etched model (keeps the MPN mark) · Ray	23d ago
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MOT10N65D

MOT · MOSFETs · TO-252

MOT10N65D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate terminal; gate-source voltage is limited to ±30 V (VGSS) per the absolute maximum ratings.
2	Drain	passive	Drain terminal; the device is rated for a drain-source voltage of 650 V (VDSS) and a continuous drain current of 10 A at TC = 25°C.
3	Source	passive	Source terminal; it is the reference for the gate-source ratings and the maximum continuous body diode forward current is 10 A (IS).

Key specifications

Parameter	Value
Manufacturer	MOT
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS		650	V	TC = 25°C unless otherwise specified	1
Gate-Source Voltage	VGSS	-30	30	V		1
Avalanche Current (Repetitive)	IAR		10	A		1
Drain Current Continuous	ID		10	A	TC = 25°C unless otherwise specified	1
Drain Current Pulsed	IDM		38	A	Note 2	1
Avalanche Energy Single Pulsed	EAS		700	mJ	Single pulsed (Note 3)	1
Avalanche Energy Repetitive	EAR		15.6	mJ	Repetitive (Note 2)	1
Peak Diode Recovery dv/dt	dv/dt		4.5	V/ns	Note 4	1
Power Dissipation TO-252/251	PD		156	W	TO-252/251 package	1
Junction Temperature	TJ		150	°C		1
Operating Temperature	TOPR	-55	150	°C		1
Drain-Source Breakdown Voltage	BVDSS	650		V	VGS = 0V, ID = 250μA	2
Drain-Source Leakage Current	IDSS		1	µA	VDS = 650V, VGS = 0V	2
Gate-Source Leakage Current Forward	IGSS		100	nA	VGS = 30 V, VDS = 0 V	2
Gate-Source Leakage Current Reverse	IGSS	-100		nA	VGS = -30 V, VDS = 0 V	2
Gate Threshold Voltage	VGS(TH)	2	4	V	VDS = VGS, ID = 250μA	2
Static Drain-Source On-State Resistance	RDS(ON)		0.96	Ω	VGS = 10V, ID = 5.0A	2
Drain-Source Diode Forward Voltage	VSD		1.4	V	VGS = 0 V, IS = 10A	2
Maximum Continuous Drain-Source Diode Forward Current	IS		10	A		2
Maximum Pulsed Drain-Source Diode Forward Current	ISM		38	A		2
Junction-to-Case Thermal Resistance	ZθJC(t)		2.5	D/W	Transient thermal response, Note 1	6

CAD (KiCad official)

Symbol: MOT10N65D
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: mot10n65d-etched.step / mot10n65d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot10n65d.step / mot10n65d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: MOT datasheet (8 pp, sha256 d3e1e522b3a49911, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF