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MOT100N03MD

MOT · MOSFETs · TO-252

MOT100N03MD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V (absolute maximum).
2 Drain passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 30 V with continuous drain current of 100 A at TC=25℃.
3 Source passive Source terminal of the N-channel MOSFET; source-drain diode forward current is rated at 90 A.

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID 100 A TC=25℃ 1
Continuous Drain Current ID 70 A TC=100℃ 1
Pulsed Drain Current IDM 400 A 1
Single Pulsed Avalanche Current IAS 35 A 1
Single Pulsed Avalanche Energy EAS 400 mJ L = 0.5mH, IAS = 30A, VDD = 25V, RG = 25Ω, Starting TJ = 25℃ 1
Power Dissipation PD 50 W TC=25℃ 1
Power Dissipation Derating PD 0.4 W/℃ Derate above 25℃ 1
Junction Temperature TJ 175 ℃ 1
Storage Temperature TSTG -55 175 ℃ 1
Junction to Ambient Thermal Resistance θJA 110 ℃/W 1
Junction to Case Thermal Resistance θJC 2.5 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS =0 V, ID =250 µA 2
Drain-Source Leakage Current IDSS 1 µA VDS=30 V,VGS =0 V 2
Gate-Source Leakage Current IGSS -100 100 nA VDS =0 V, VGS = ±20 V 2
Gate Threshold Voltage VGS(TH) 1 3 V VDS =VGS, ID =250 µA 2
Static Drain-Source On-Resistance RDS(ON) 3.4 4.5 mΩ VGS =10 V, ID =20 A 2
Static Drain-Source On-Resistance RDS(ON) 4.7 6 mΩ VGS =4.5 V, ID =20 A 2
Input Capacitance CISS 2500 pF VDS =15V, VGS =0V, f=1.0MHz 2
Output Capacitance COSS 300 pF VDS =15V, VGS =0V, f=1.0MHz 2
Reverse Transfer Capacitance CRSS 300 pF VDS =15V, VGS =0V, f=1.0MHz 2
Total Gate Charge QG 50 nC VDS =15V, VGS =5V, ID =16A 2
Turn-ON Delay Time tD(ON) 25.7 ns VDD=15V, ID =1A, RGEN =6Ω, VGS =10 V 2
Turn-ON Rise Time tR 10 ns VDD=15V, ID =1A, RGEN =6Ω, VGS =10 V 2
Turn-OFF Delay Time tD(OFF) 128 ns VDD=15V, ID =1A, RGEN =6Ω, VGS =10 V 2
Turn-OFF Fall-Time tF 34 ns VDD=15V, ID =1A, RGEN =6Ω, VGS =10 V 2
Drain-Source Diode Forward Voltage VSD 1.5 V IS=20 A,VGS=0 V 2
Drain-Source Diode Forward Current IS 90 A 2

CAD (KiCad official)

  • Symbol: MOT100N03MD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot100n03md-etched.step / mot100n03md-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot100n03md.step / mot100n03md.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (7 pp, sha256 d59b9eedaeb74780, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF