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Ray Publish 0.1.0 974c953 17d ago

MOT100N02D

MOT · MOSFETs · TO-252

MOT100N02D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the datasheet rates the gate-to-source voltage VGSS at 12 V absolute maximum.
2 Drain passive Drain terminal of the N-channel MOSFET; the datasheet rates the drain-to-source voltage VDSS at 20 V and continuous drain current ID at 100 A (TC=25°C).
3 Source passive Source terminal of the N-channel MOSFET, the reference for the gate-to-source and drain-to-source ratings; the datasheet gives no separate limit for this pin.

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-source voltage VDSS 20 V 1
Gate-to-source voltage VGSS 12 V 1
Continuous drain current ID 100 A TC=25°C 1
Continuous drain current ID 70 A TC=100°C 1
Pulsed drain current IDM 360 A 1
Avalanche energy EAS 118 mJ 1
Power dissipation PD 88 W 1
Junction storage temperature range TJ,TSTG -55 150 °C 1
Thermal resistance, Junction-to-case RJC 1.8 °C/W 1
Drain-source breakdown voltage V(BR)DSS 20 V VGS=0V, ID=250uA 2
Zero gate voltage drain current IDSS 1 uA VDS=20V,VGS=0V 2
Zero gate voltage drain current IDSS 5 uA TJ=55°C 2
Gate-body leakage current IGSS -100 100 nA VGS=12V,VDS=0V 2
Gate threshold voltage VGS(th) 0.5 1.1 V VDS=VGS, ID=250uA 2
Static drain-source on-resistance 2.8 4 mΩ VGS=4.5V, ID=30A 2
Static drain-source on-resistance 4 6 mΩ VGS=2.5V, ID=20A 2
Forward transconductance gFS 50 S VDS=5V, ID=5A 2
Diode forward voltage VSD 0.75 1 V IS=1A, VGS=0V 2
Diode continuous current IS 100 A TC=25°C 2
Input capacitance CISS 3200 pF VGS=0V,VDS=10V, f=1MHz 2
Output capacitance COSS 460 pF VGS=0V,VDS=10V, f=1MHz 2
Reverse transfer capacitance Crss 445 pF VGS=0V,VDS=10V, f=1MHz 2
Gate resistance Rg 1.4 Ω VGS=0V,VDS=0V, f=1MHz 2
Total charge Qg 48 nC VGS=4.5V, VDS=10V, ID=30A 2
Gate source charge Qgs 3.6 nC VGS=4.5V, VDS=10V, ID=30A 2
Gate drain charge Qgd 19 nC VGS=4.5V, VDS=10V, ID=30A 2
Turn-on delay time tD(on) 9.7 nS VGS=4.5V, RGEN=1.8Ω, VDD=10V 2
Turn-on rise time tr 37 nS VGS=4.5V, RGEN=1.8Ω, VDD=10V 2
Turn-off delay time tD(off) 63 nS VGS=4.5V, RGEN=1.8Ω, VDD=10V 2
Turn-off fall time tf 52 nS VGS=4.5V, RGEN=1.8Ω, VDD=10V 2
Body-diode reverse recovery time trr 23 nS IF=30A, dIF/dt=100A/us 2
Body-diode reverse recovery charge Qrr 10 nC IF=30A, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: MOT100N02D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot100n02d-etched.step / mot100n02d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot100n02d.step / mot100n02d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (6 pp, sha256 600e363fa2605844, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF