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Contents

README

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MOCD217R2M

onsemi · Transistor, Photovoltaic Output Optoisolators · SOIC-8

MOCD217R2M from onsemi, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE 1 passive Anode of channel 1 infrared emitting diode, specified at IF = 1.0 mA with 60 mA max continuous forward current.
2 CATHODE 1 passive Cathode of channel 1 infrared emitting diode, with reverse voltage limited to 6.0 V max.
3 ANODE 2 passive Anode of channel 2 infrared emitting diode, specified at IF = 1.0 mA with 60 mA max continuous forward current.
4 CATHODE 2 passive Cathode of channel 2 infrared emitting diode, with reverse voltage limited to 6.0 V max.
5 EMITTER 2 passive Emitter of channel 2 phototransistor, with emitter-collector voltage limited to 7.0 V max.
6 COLLECTOR 2 passive Collector of channel 2 phototransistor, rated 30 V VCEO max and 150 mA max continuous collector current.
7 EMITTER 1 passive Emitter of channel 1 phototransistor, with emitter-collector voltage limited to 7.0 V max.
8 COLLECTOR 1 passive Collector of channel 1 phototransistor, rated 30 V VCEO max and 150 mA max continuous collector current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOIC-8
Category Optoisolators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Leakage Current IR 0.1 100 µA VR = 6.0 V 2
Collector-Emitter Dark Current ICEO1 1 50 nA VCE = 10 V, TA = 25°C 2
Collector-Emitter Breakdown Voltage BVCEO 30 90 V IC = 100 µA 2
Emitter-Collector Breakdown Voltage BVECO 7 7.8 V IE = 100 µA 2
Output Collector Current (CTR) CTR 100 130 % IF = 1.0 mA, VCE = 5 V 2
Collector-Emitter Saturation Voltage VCE (sat) 0.35 0.4 V IC = 100 µA, IF = 1.0 mA 2
Isolation Surge Voltage VISO 2500 Vac(rms) f = 60 Hz, t = 1 min. 2
Isolation Resistance RISO 1011 Ω VI-O = 500 V 2
Input Forward Voltage VF 1.05 1.3 V IF = 1.0 mA 2
Continuous Forward Current IF 60 mA 1
Forward Current - Peak IF(pk) 1 A PW = 100 µs, 120 pps 1
Reverse Voltage VR 6 V 1
LED Power Dissipation PD 90 mW @ TA = 25°C 1
Collector-Emitter Voltage VCEO 30 V 1
Emitter-Collector Voltage VECO 7 V 1
Collector Current-Continuous IC 150 mA 1
Detector Power Dissipation PD 150 mW @ TA = 25°C 1
Input-Output Isolation Voltage VISO 2500 Vac(rms) f = 60 Hz, 1 min. Duration 1
Total Device Power Dissipation PD 250 mW @ TA = 25°C 1
Ambient Operating Temperature Range TA -40 100 °C 1
Storage Temperature Range Tstg -40 125 °C 1

CAD (KiCad official)

  • Symbol: MOCD217R2M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: mocd217r2m-etched.step / mocd217r2m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mocd217r2m.step / mocd217r2m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (8 pp, sha256 521670a2ea6fdf7b, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF