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Ray Publish 0.1.0 5ee2ebc 7d ago

MOCD217M

onsemi · Transistor, Photovoltaic Output Optoisolators · SO-8

MOCD217M from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE 1 passive Anode of channel 1 infrared LED; continuous forward current is limited to 60 mA and reverse voltage to 6.0 V.
2 CATHODE 1 passive Cathode of channel 1 infrared LED; continuous forward current is limited to 60 mA.
3 ANODE 2 passive Anode of channel 2 infrared LED; continuous forward current is limited to 60 mA and reverse voltage to 6.0 V.
4 CATHODE 2 passive Cathode of channel 2 infrared LED; continuous forward current is limited to 60 mA.
5 EMITTER 2 passive Emitter of channel 2 phototransistor; emitter-collector voltage is limited to 7 V.
6 COLLECTOR 2 passive Collector of channel 2 phototransistor; VCEO is 30 V max for MOCD217M and continuous collector current is up to 150 mA.
7 EMITTER 1 passive Emitter of channel 1 phototransistor; emitter-collector voltage is limited to 7 V.
8 COLLECTOR 1 passive Collector of channel 1 phototransistor; VCEO is 30 V max for MOCD217M and continuous collector current is up to 150 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SO-8
Category Optoisolators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Forward Voltage (MOCD217M) VF 1.05 1.3 V IF = 1 mA 4
Reverse Leakage Current IR 0.001 100 A VR = 6 V 4
Collector-Emitter Dark Current ICEO 1 50 nA VCE = 10 V, TA = 25°C 4
Collector-Emitter Breakdown Voltage (MOCD217M) BVCEO 30 100 V IC = 100 A 4
Emitter-Collector Breakdown Voltage BVECO 7 10 V IE = 100 A 4
Collector-Output Current (MOCD217M) CTR 100 % IF = 1 mA, VCE = 5 V 4
Collector-Emitter Saturation Voltage (MOCD217M) VCE(SAT) 0.4 V IC = 100 A, IF = 1 mA 4
Input-Output Isolation Voltage VISO 2500 VACRMS t = 1 Minute 4
Storage Temperature TSTG -40 125 °C 3
Ambient Operating Temperature TA -40 100 °C 3
Junction Temperature TJ -40 125 °C 3
Lead Solder Temperature TSOL 260 °C for 10 seconds 3
Total Device Power Dissipation PD 240 mW TA = 25°C 3
Continuous Forward Current IF 60 mA 3
Forward Current - Peak IF (pk) 1 A PW = 100 s, 120 pps 3
Reverse Voltage VR 6 V 3
LED Power Dissipation PD 90 mW TA = 25°C 3
Continuous Collector Current IC 150 mA 3
Collector-Emitter Voltage (MOCD211M, MOCD213M, MOCD217M) VCEO 30 V 3
Emitter-Collector Voltage VECO 7 V 3
Detector Power Dissipation PD 150 mW TA = 25°C 3

CAD (KiCad official)

  • Symbol: MOCD217M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: mocd217m-etched.step / mocd217m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mocd217m.step / mocd217m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 643e9fb12e2ebbd4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF