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Contents

README

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MOC207R2M

onsemi · Transistor, Photovoltaic Output Optoisolators · SO-8

MOC207R2M from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Anode of the gallium arsenide infrared LED; continuous forward current is limited to 60 mA and reverse voltage to 6.0 V.
2 CATHODE passive Cathode of the infrared LED input; connect to the LED return.
3 N/C unconnected No internal connection.
4 N/C unconnected No internal connection.
5 EMITTER passive Emitter of the output phototransistor; emitter-collector voltage is limited to 7 V.
6 COLLECTOR passive Collector of the output phototransistor; collector-emitter voltage rated 70 V minimum BVCEO for MOC207M and continuous collector current up to 150 mA.
7 BASE passive Base of the output phototransistor, optional connection for an RBE resistor to adjust CTR and switching speed.
8 N/C unconnected No internal connection.

Key specifications

Parameter Value
Manufacturer onsemi
Package SO-8
Category Optoisolators
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Storage Temperature TSTG -40 125 °C 4
Ambient Operating Temperature TA -40 100 °C 4
Junction Temperature TJ -40 125 °C 4
Lead Solder Temperature TSOL 260 °C for 10 seconds 4
Total Device Power Dissipation PD 240 mW TA = 25°C 4
Continuous Forward Current (LED) IF 60 mA 4
Forward Current - Peak IF (pk) 1 A PW = 100 µs, 120 pps 4
Reverse Voltage (LED) VR 6 V 4
LED Power Dissipation PD 90 mW TA = 25°C 4
Continuous Collector Current IC 150 mA 4
Collector-Emitter Voltage VCEO 30 V 4
Emitter-Collector Voltage VECO 7 V 4
Detector Power Dissipation PD 150 mW TA = 25°C 4
Collector-Emitter Breakdown Voltage (MOC205M/MOC206M/MOC207M) BVCEO 70 100 V IC = 100 µA 5
Input Forward Voltage (MOC205M/206M/207M, MOC211M/212M/213M) VF 1.15 1.5 V IF = 10 mA 5
Reverse Leakage Current IR 0.001 100 µA VR = 6 V 5
Collector-Emitter Saturation Voltage (MOC205M/206M/207M) VCE(SAT) 0.4 V IC = 2 mA, IF = 10 mA 5
Current Transfer Ratio (MOC207M) CTR 100 200 % IF = 10 mA, VCE = 10 V 5
Isolation Input-Output Voltage VISO 2500 VACRMS t = 1 Minute 6
Collector-Emitter Dark Current ICEO1 1 50 nA VCE = 10 V, TA = 25°C 5
Collector-Base Breakdown Voltage BVCBO 70 120 V IC = 10 µA 5
Emitter-Collector Breakdown Voltage BVECO 7 10 V IE = 100 µA 5
Collector-Emitter Dark Current ICEO2 1 µA VCE = 10 V, TA = 100°C 5
Input Capacitance CIN 18 pF 5
Collector-Emitter Capacitance CCE 7 pF f = 1.0 MHz, VCE = 0 5
Isolation Capacitance CISO 0.2 pF VI-O = 0 V, f = 1 MHz 6
Turn-On Time ton 7.5 µs IC = 2 mA, VCC = 10 V, RL = 100 Ω (Figure 12) 5
Turn-Off Time toff 5.7 µs IC = 2 mA, VCC = 10 V, RL = 100 Ω (Figure 12) 5
Rise Time tr 3.2 µs IC = 2 mA, VCC = 10 V, RL = 100 Ω (Figure 12) 5
Fall Time tf 4.7 µs IC = 2 mA, VCC = 10 V, RL = 100 Ω (Figure 12) 5

CAD (KiCad official)

  • Symbol: MOC207R2M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: moc207r2m-etched.step / moc207r2m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); moc207r2m.step / moc207r2m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 98013b31079a67e2, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF