component

MMUN5331DW

Public Made by Adom

by adom

CBI Digital Transistors, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmmun5331dwfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers mmun5331dw: viewers · Ray 17d ago
mmun5331dw-etched.glb Publish 0.1.0 · Ray 17d ago
mmun5331dw-etched.step mmun5331dw: factory component page (tier=lcsc) · Ray 17d ago
mmun5331dw-hero.glb mmun5331dw: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
mmun5331dw-hero.overlay.json Publish 0.1.0 · Ray 17d ago
mmun5331dw.glb Publish 0.1.0 · Ray 17d ago
mmun5331dw.kicad_mod Publish 0.1.0 · Ray 17d ago
mmun5331dw.kicad_sym Publish 0.1.0 · Ray 17d ago
mmun5331dw.lbr Publish 0.1.0 · Ray 17d ago
mmun5331dw.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

MMUN5331DW

CBI · Digital Transistors · SOT-363

MMUN5331DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of Q2 (NPN), with R2 base-emitter resistor of 2.2 kΩ (typ) connected to it; Q2 ratings are VCEO 50 Vdc and IC 100 mAdc.
2 B2 input Base input of Q2 (NPN) through series resistor R1 of 2.2 kΩ (typ), with R1/R2 ratio 0.8 to 1.2.
3 C1 passive Collector of Q1 (PNP), rated VCEO 50 Vdc (sign omitted) and IC 100 mAdc maximum.
4 E1 passive Emitter of Q1 (PNP), with R2 base-emitter resistor of 2.2 kΩ (typ) connected to it.
5 B1 input Base input of Q1 (PNP) through series resistor R1 of 2.2 kΩ (typ), with R1/R2 ratio 0.8 to 1.2.
6 C2 passive Collector of Q2 (NPN), rated VCEO 50 Vdc and IC 100 mAdc maximum.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (VCE = 10 V, IC = 5.0 mA) hFE 8 15 VCE = 10 V, IC = 5.0 mA 3
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc IC = 10 mA, IB = 5 mA (MMUN5330DW/MMUN5331DW) 3
Output Voltage (on) VOL 0.2 Vdc VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kfi 3
Input Resistor R1 R1 1.5 2.2 2.9 kfi 3
Resistor Ratio (MMUN5330DW/MMUN5331DW/MMUN5332DW) R1/R2 0.8 1 1.2 3
Collector-Base Cutoff Current ICBO 100 nAdc VCB = 50 V, IE = 0 4
Collector-Emitter Cutoff Current ICEO 500 nAdc VCE = 50 V, IB = 0 4
Emitter-Base Cutoff Current (MMUN5331DW) IEBO 2.3 mAdc VEB = 6.0 V, IC = 0 4
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc IC = 10 µA, IE = 0 4
Collector-Emitter Breakdown Voltage (Note 3) V(BR)CEO 50 Vdc IC = 2.0 mA, IB = 0 4
Input Resistor R2 (nominal, ordering table) R2 2.2 kfi 2
Collector-Base Voltage VCBO 50 Vdc 1
Collector-Emitter Voltage VCEO 50 Vdc 1
Collector Current IC 100 mAdc 1
Total Device Dissipation (One Junction Heated) PD 187 mW One junction heated, TA = 25°C, FR-4 @ Minimum Pad (Note 1) 1
Total Device Dissipation (One Junction Heated) PD 256 mW One junction heated, TA = 25°C, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Total Device Dissipation (Both Junctions Heated) PD 250 mW Both junctions heated, TA = 25°C, FR-4 @ Minimum Pad (Note 1) 1
Total Device Dissipation (Both Junctions Heated) PD 385 mW Both junctions heated, TA = 25°C, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Thermal Resistance, Junction-to-Ambient (One Junction Heated) RJA 670 °C/W One junction heated, FR-4 @ Minimum Pad (Note 1) 1
Thermal Resistance, Junction-to-Ambient (One Junction Heated) RJA 490 °C/W One junction heated, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Thermal Resistance, Junction-to-Ambient (Both Junctions Heated) RJA 493 °C/W Both junctions heated, FR-4 @ Minimum Pad (Note 1) 1
Thermal Resistance, Junction-to-Ambient (Both Junctions Heated) RJA 325 °C/W Both junctions heated, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Thermal Resistance, Junction-to-Lead RJL 188 °C/W Both junctions heated, FR-4 @ Minimum Pad (Note 1) 1
Thermal Resistance, Junction-to-Lead RJL 208 °C/W Both junctions heated, FR-4 @ 1.0 x 1.0 inch Pad (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMUN5331DW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmun5331dw-etched.step / mmun5331dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmun5331dw.step / mmun5331dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (7 pp, sha256 232559455469d1d1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF