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MMUN2130LT1G

Public Made by Adom

by adom

onsemi Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMUN2130LT1G

onsemi · Digital Transistors · SOT-23

MMUN2130LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base is the input of the pre-biased PNP transistor, with the datasheet stating a maximum input forward voltage VIN(fwd) of 10 Vdc and a maximum input reverse voltage VIN(rev) of 10 Vdc.
2 EMITTER power_in Emitter is the ground reference (labelled GROUND in the pin connections) for the device and the base-emitter bias resistor R2 connects across it.
3 COLLECTOR output Collector is the output of the transistor, rated at a maximum collector-emitter voltage VCEO of 50 Vdc and a continuous collector current IC of 100 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Cutoff Current ICBO 100 nAdc (VCB = 50 V, IE = 0) 5
Collector-Emitter Cutoff Current ICEO 500 nAdc (VCE = 50 V, IB = 0) 5
Emitter-Base Cutoff Current IEBO 4.3 mAdc (VEB = 6.0 V, IC = 0) 5
Collector-Base Breakdown Voltage V(BR)CBO 50 Vdc (IC = 10 A, IE = 0) 5
Collector-Emitter Breakdown Voltage V(BR)CEO 50 Vdc (IC = 2.0 mA, IB = 0) 5
DC Current Gain hFE 3 5 (IC = 5.0 mA, VCE = 10 V) 5
Collector-Emitter Saturation Voltage VCE(sat) 0.25 Vdc (IC = 10 mA, IB = 5.0 mA) 5
Input Voltage (off) Vi(off) 1.2 0.5 Vdc (VCE = 5.0 V, IC = 100 A) 5
Input Voltage (on) Vi(on) 2 1.6 Vdc (VCE = 0.3 V, IC = 20 mA) 5
Output Voltage (on) VOL 0.2 Vdc (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) 5
Output Voltage (off) VOH 4.9 Vdc (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 k) 5
Input Resistor R1 R1 0.7 1 1.3 k 5
Resistor Ratio R1/R2 0.8 1 1.2 5
Collector-Base Voltage VCBO 50 Vdc 1
Collector-Emitter Voltage VCEO 50 Vdc 1
Collector Current - Continuous IC 100 mAdc 1
Input Forward Voltage VIN(fwd) 10 Vdc 1
Input Reverse Voltage VIN(rev) 10 Vdc 1
Total Device Dissipation (minimum pad) PD 246 mW TA = 25°C (Note 1: FR-4 @ Minimum Pad) 4
Total Device Dissipation (1.0 x 1.0 inch pad) PD 400 mW TA = 25°C (Note 2: FR-4 @ 1.0 x 1.0 Inch Pad) 4
Derate above 25°C (minimum pad) 2 mW/°C Note 1: FR-4 @ Minimum Pad 4
Derate above 25°C (1.0 x 1.0 inch pad) 3.2 mW/°C Note 2: FR-4 @ 1.0 x 1.0 Inch Pad 4
Thermal Resistance, Junction to Ambient (minimum pad) RJA 508 °C/W Note 1: FR-4 @ Minimum Pad 4
Thermal Resistance, Junction to Ambient (1.0 x 1.0 inch pad) RJA 311 °C/W Note 2: FR-4 @ 1.0 x 1.0 Inch Pad 4
Thermal Resistance, Junction to Lead (minimum pad) RJL 174 °C/W Note 1: FR-4 @ Minimum Pad 4
Thermal Resistance, Junction to Lead (1.0 x 1.0 inch pad) RJL 208 °C/W Note 2: FR-4 @ 1.0 x 1.0 Inch Pad 4
Junction and Storage Temperature Range TJ, Tstg -55 150 °C 4

CAD (KiCad official)

  • Symbol: MMUN2130LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmun2130lt1g-etched.step / mmun2130lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmun2130lt1g.step / mmun2130lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (12 pp, sha256 e986977c0ea65963, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF