component
MMST5551
Public Made by Adomby adom
hongjiacheng Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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mmst5551: specified limits as data (metadata.characteristics, 20 rows from the datasheet)
2 files changed
+275−1
README.md+27@@ -21,6 +21,33 @@ MMST5551 from hongjiacheng, in a SOT-323. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Base Voltage | VCBO | | | 180 | V | | 1 |+| Collector-Emitter Voltage | VCEO | | | 160 | V | | 1 |+| Emitter-Base Voltage | VEBO | | | 6 | V | | 1 |+| Collector Current | IC | | | 0.6 | A | | 1 |+| Collector Power Dissipation | PC | | | 200 | mW | | 1 |+| Storage temperature | Tstg | -55 | | 150 | ℃ | | 1 |+| Junction temperature | Tj | -55 | | 150 | ℃ | | 1 |+| Collector-Base Breakdown Voltage | V(BR)CBO | 180 | | | V | IC=100μA, IE=0 | 1 |+| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | | | V | IC=1mA, IB=0 | 1 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | | | V | IE=100μA, IC=0 | 1 |+| Collector-Emitter cut-off current | ICBO | | | 50 | nA | VCE=120V, IB=0 | 1 |+| Emitter-Base cut-off current | IEBO | | | 50 | nA | VEB=4.0V, IC=0 | 1 |+| DC Current Gain hFE(1) | hFE(1) | 80 | | | | IC=1.0mA VCE=5.0V | 1 |+| DC Current Gain hFE(2) | hFE(2) | 80 | | 300 | | IC=10mA VCE=5.0V | 1 |+| DC Current Gain hFE(3) | hFE(3) | 30 | | | | IC=50mA VCE=5.0V | 1 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | 0.15 | V | IC=10mA IB=1mA | 1 |+| Base-Emitter Saturation Voltage | VBE(sat) | | | 1 | V | IC=10mA IB=1mA | 1 |+| Collector output capacitance | Cob | | | 6 | pF | VCB=10V,IE=0,f=1MHz | 1 |+| Transition frequency | fT | 100 | | 300 | MHz | IC=10mA, VCE=10V，f=100MHz | 3 |+| Typical Thermal Resistance, junction to ambient | RθJ-A | | 625 | | ℃/W | | 1 |+ ## CAD (KiCad official) - Symbol: `MMST5551`
page.json+248−1@@ -150,6 +150,253 @@ "Package": "SOT-323", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "1368b3f7c24ca204",+ "rows": [+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Power Dissipation",+ "symbol": "PC",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Breakdown Voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": 180,+ "typ": null,+ "max": null,+ "conditions": "IC=100μA, IE=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": 160,+ "typ": null,+ "max": null,+ "conditions": "IC=1mA, IB=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": 6,+ "typ": null,+ "max": null,+ "conditions": "IE=100μA, IC=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter cut-off current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VCE=120V, IB=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base cut-off current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VEB=4.0V, IC=0",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain hFE(1)",+ "symbol": "hFE(1)",+ "kind": "electrical",+ "unit": "",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "IC=1.0mA VCE=5.0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain hFE(2)",+ "symbol": "hFE(2)",+ "kind": "electrical",+ "unit": "",+ "min": 80,+ "typ": null,+ "max": 300,+ "conditions": "IC=10mA VCE=5.0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain hFE(3)",+ "symbol": "hFE(3)",+ "kind": "electrical",+ "unit": "",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "IC=50mA VCE=5.0V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.15,+ "conditions": "IC=10mA IB=1mA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter Saturation Voltage",+ "symbol": "VBE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "IC=10mA IB=1mA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector output capacitance",+ "symbol": "Cob",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "VCB=10V,IE=0,f=1MHz",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Transition frequency",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": 300,+ "conditions": "IC=10mA, VCE=10V，f=100MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Typical Thermal Resistance, junction to ambient",+ "symbol": "RθJ-A",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 625,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +438,4 @@ "visibility": { "public": true }-}+}