component
MMST5551
Public Made by Adomby adom
hongjiacheng Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMST5551
hongjiacheng · Bipolar (BJT) · SOT-323
MMST5551 from hongjiacheng, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; the function diagram shows pin 1 as the base, with emitter-base breakdown V(BR)EBO of 6.0V min and VEBO max of 6.0V. |
| 2 | E | passive | Emitter of the NPN transistor; the function diagram shows pin 2 at the arrow terminal, with VEBO max of 6.0V. |
| 3 | C | passive | Collector of the NPN transistor; the datasheet rates it for VCBO 180V, VCEO 160V and IC 0.6A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 180 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 160 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current | IC | 0.6 | A | 1 | |||
| Collector Power Dissipation | PC | 200 | mW | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 180 | V | IC=100μA, IE=0 | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | V | IC=1mA, IB=0 | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=100μA, IC=0 | 1 | ||
| Collector-Emitter cut-off current | ICBO | 50 | nA | VCE=120V, IB=0 | 1 | ||
| Emitter-Base cut-off current | IEBO | 50 | nA | VEB=4.0V, IC=0 | 1 | ||
| DC Current Gain hFE(1) | hFE(1) | 80 | IC=1.0mA VCE=5.0V | 1 | |||
| DC Current Gain hFE(2) | hFE(2) | 80 | 300 | IC=10mA VCE=5.0V | 1 | ||
| DC Current Gain hFE(3) | hFE(3) | 30 | IC=50mA VCE=5.0V | 1 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.15 | V | IC=10mA IB=1mA | 1 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1 | V | IC=10mA IB=1mA | 1 | ||
| Collector output capacitance | Cob | 6 | pF | VCB=10V,IE=0,f=1MHz | 1 | ||
| Transition frequency | fT | 100 | 300 | MHz | IC=10mA, VCE=10V，f=100MHz | 3 | |
| Typical Thermal Resistance, junction to ambient | RθJ-A | 625 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
MMST5551 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
mmst5551-etched.step/mmst5551-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmst5551.step/mmst5551.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: hongjiacheng datasheet (3 pp, sha256
1368b3f7c24ca204, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).