# MMST5401

**HT(Shenzhen Jinyu Semicon)** · Bipolar (BJT) · SOT-323

MMST5401 from HT(Shenzhen Jinyu Semicon), in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor, with an emitter-base voltage rating of VEBO = -5 V and emitter-base breakdown of -5 V minimum at IE = -10 µA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, with a maximum collector current rating of IC = -600 mA and emitter-base voltage limit of -5 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor, rated for collector-base voltage VCBO = -160 V, collector-emitter voltage VCEO = -150 V, and total collector power dissipation of 200 mW. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -160 |  |  | V | IC=-100µA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -150 |  |  | V | IC=-1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IE=-10µA, IC=0 | 1 |
| Collector cut-off current | ICBO | -50 |  |  | nA | VCB=-120V, IE=0 | 1 |
| Emitter cut-off current | IEBO | -50 |  |  | nA | VEB=-3V, IC=0 | 1 |
| DC current gain | hFE | 50 |  |  |  | VCE=-5V, IC=-1mA | 1 |
| DC current gain | hFE | 100 |  | 300 |  | VCE=-5V, IC=-10mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | -0.5 |  |  | V | IC=-50mA, IB=-5mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | -0.2 |  |  | V | IC=-10mA, IB=-1mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | -1 |  |  | V | IC=-50mA, IB=-5mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE=-10V, IC=-10mA, f=100MHz | 1 |
| Collector output capacitance | Cob |  |  | 6 | pF | VCB=-10V, IE=0, f=1MHz | 1 |
| Collector-base voltage | VCBO | -160 |  |  | V | Ta=25℃ | 1 |
| Collector-emitter voltage | VCEO | -150 |  |  | V | Ta=25℃ | 1 |
| Emitter-base voltage | VEBO | -5 |  |  | V | Ta=25℃ | 1 |
| Collector current | IC | -600 |  |  | mA | Ta=25℃ | 1 |
| Collector power dissipation | PC |  |  | 200 | mW | Ta=25℃ | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance from junction to ambient | RΘJA |  |  | 625 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `MMST5401`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `mmst5401-etched.step` / `mmst5401-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmst5401.step` / `mmst5401.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HT(Shenzhen Jinyu Semicon) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756499248072536064) (4 pp, sha256 `b1e63bfdbd256f42`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmst5401-datasheet.pdf)