component
MMST4401
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MSKSEMI Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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MMST4401
MSKSEMI · Bipolar (BJT) · SOT-323
MMST4401 from MSKSEMI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, so use the device maximum ratings (VEBO 6 V, IC 600 mA). |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives no pin-specific limit, so use the device maximum ratings (VEBO 6 V, IC 600 mA). |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet gives no pin-specific limit, so use the device maximum ratings (VCBO 60 V, VCEO 40 V, IC 600 mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 60 | V | 2 | |||
| Collector-emitter voltage | VCEO | 40 | V | 2 | |||
| Emitter-base voltage | VEBO | 6 | V | 2 | |||
| Collector current | IC | 600 | mA | 2 | |||
| Collector power dissipation | PC | 200 | mW | 2 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 2 | ||
| Thermal resistance, junction to ambient | RΘJA | 625 | ℃/W | 2 | |||
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100µA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC=1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=100µA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB=35V, IE=0 | 2 | ||
| Collector cut-off current | ICEO | 500 | nA | VCE=35V, IB=0 | 2 | ||
| DC current gain | hFE | 20 | VCE=1V, IC=100µA | 2 | |||
| DC current gain | hFE | 40 | VCE=1V, IC=1mA | 2 | |||
| DC current gain | hFE | 80 | VCE=1V, IC=10mA | 2 | |||
| DC current gain | hFE | 100 | 300 | VCE=1V, IC=150mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC=150mA, IB=15mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.75 | V | IC=500mA, IB=50mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 0.75 | 0.95 | V | IC=150mA, IB=15mA | 2 | |
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=500mA, IB=50mA | 2 | ||
| Transition frequency | fT | 250 | MHz | VCE=10V, IC=20mA, f=100MHz | 2 | ||
| Collector output capacitance | Cob | 6.5 | pF | VCB=5V, IE=0, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
MMST4401 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
mmst4401-etched.step/mmst4401-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmst4401.step/mmst4401.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (5 pp, sha256
25e3fd936bf4fbac, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MMST4401
**MSKSEMI** · Bipolar (BJT) · SOT-323
MMST4401 from MSKSEMI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, so use the device maximum ratings (VEBO 6 V, IC 600 mA). |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the datasheet gives no pin-specific limit, so use the device maximum ratings (VEBO 6 V, IC 600 mA). |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the datasheet gives no pin-specific limit, so use the device maximum ratings (VCBO 60 V, VCEO 40 V, IC 600 mA). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | 60 | V | | 2 |
| Collector-emitter voltage | VCEO | | | 40 | V | | 2 |
| Emitter-base voltage | VEBO | | | 6 | V | | 2 |
| Collector current | IC | | | 600 | mA | | 2 |
| Collector power dissipation | PC | | | 200 | mW | | 2 |
| Operation junction and storage temperature range | TJ,Tstg | -55 | | 150 | ℃ | | 2 |
| Thermal resistance, junction to ambient | RΘJA | | | 625 | ℃/W | | 2 |
| Collector-base breakdown voltage | V(BR)CBO | 60 | | | V | IC=100µA, IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | | | V | IC=1mA, IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | | | V | IE=100µA, IC=0 | 2 |
| Collector cut-off current | ICBO | | | 100 | nA | VCB=35V, IE=0 | 2 |
| Collector cut-off current | ICEO | | | 500 | nA | VCE=35V, IB=0 | 2 |
| DC current gain | hFE | 20 | | | | VCE=1V, IC=100µA | 2 |
| DC current gain | hFE | 40 | | | | VCE=1V, IC=1mA | 2 |
| DC current gain | hFE | 80 | | | | VCE=1V, IC=10mA | 2 |
| DC current gain | hFE | 100 | | 300 | | VCE=1V, IC=150mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.4 | V | IC=150mA, IB=15mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.75 | V | IC=500mA, IB=50mA | 2 |
| Base-emitter saturation voltage | VBE(sat) | | 0.75 | 0.95 | V | IC=150mA, IB=15mA | 2 |
| Base-emitter saturation voltage | VBE(sat) | | | 1.2 | V | IC=500mA, IB=50mA | 2 |
| Transition frequency | fT | 250 | | | MHz | VCE=10V, IC=20mA, f=100MHz | 2 |
| Collector output capacitance | Cob | | | 6.5 | pF | VCB=5V, IE=0, f=1MHz | 2 |
## CAD (KiCad official)
- Symbol: `MMST4401`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `mmst4401-etched.step` / `mmst4401-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmst4401.step` / `mmst4401.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8600570160566575104) (5 pp, sha256 `25e3fd936bf4fbac`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mmst4401-datasheet.pdf)