component
MMST2907A
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| mmst2907a-etched.glb | 23d ago |
| mmst2907a-etched.step | 23d ago |
| mmst2907a-hero.glb | 23d ago |
| mmst2907a-hero.overlay.json | 23d ago |
| mmst2907a.glb | 23d ago |
| mmst2907a.kicad_mod | 23d ago |
| mmst2907a.kicad_sym | 23d ago |
| mmst2907a.lbr | 23d ago |
| mmst2907a.step | 23d ago |
| package.json | 23d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MMST2907A
Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-323
MMST2907A from Yangzhou Yangjie Elec Tech, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; emitter-base voltage limit is -5 V (VEBO). |
| 2 | E | passive | Emitter of the PNP transistor; emitter-base breakdown is -5 V minimum at IE=-10 µA. |
| 3 | C | passive | Collector of the PNP transistor; rated VCBO/VCEO of -60 V and continuous collector current of -600 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | VCBO | -60 | V | IC=-10uA,IE=0 | 2 | ||
| Collector-emitter breakdown voltage | VCEO* | -60 | V | IC =-10mA,IB=0 | 2 | ||
| Emitter-base breakdown voltage | VEBO | -5 | V | IE=-10μA,IC=0 | 2 | ||
| Collector-emitter cut-off current | ICEO | -50 | nA | VCE=-35V, IB=0 | 2 | ||
| Collector-base cut-off current | ICBO | -10 | nA | VCB=-50V, IE =0 | 2 | ||
| Emitter-base cut-off current | IEBO | -10 | nA | VEB=-3 V, IC =0 | 2 | ||
| DC current gain | hFE | 100 | VCE=-10V,IC=-1mA | 2 | |||
| DC current gain | hFE | 100 | 300 | VCE=-10V,IC=-150mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -1.6 | V | IC=-500mA,IB=-50mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -2.6 | V | IC=-500mA,IB=-50mA | 2 | ||
| Transition frequency | fT | 200 | MHz | VCE=-20V,IC=-50mA,f=100MHz | 2 | ||
| Delay time | td | 10 | ns | VCC=-30V, IC=-150mA,IB1=-15mA | 2 | ||
| Rise time | tr | 40 | ns | 2 | |||
| Storage time | ts | 80 | ns | VCC=-30V,IC=-150mA, IB1=IB2=-15mA | 2 | ||
| Fall time | tf | 30 | ns | 2 | |||
| Collector-base voltage | VCBO | -60 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage | VCEO | -60 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta=25℃ | 1 | ||
| Collector current | IC | -600 | mA | Ta=25℃ | 1 | ||
| Collector power dissipation | PC | 200 | mW | Ta=25℃ | 1 | ||
| Operation junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
MMST2907A - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
mmst2907a-etched.step/mmst2907a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmst2907a.step/mmst2907a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256
64d7e3c5d5287e2c, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).