main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 18d ago
viewers mmst2222a-tp: viewers · Ray 18d ago
mmst2222a-tp-etched.glb Publish 0.1.0 · Ray 18d ago
mmst2222a-tp-etched.step mmst2222a-tp: factory component page (tier=lcsc) · Ray 18d ago
mmst2222a-tp-hero.glb mmst2222a-tp: hero GLB from the etched model (keeps the MPN mark) · Ray 18d ago
mmst2222a-tp-hero.overlay.json Publish 0.1.0 · Ray 18d ago
mmst2222a-tp.glb Publish 0.1.0 · Ray 18d ago
mmst2222a-tp.kicad_mod Publish 0.1.0 · Ray 18d ago
mmst2222a-tp.kicad_sym Publish 0.1.0 · Ray 18d ago
mmst2222a-tp.lbr Publish 0.1.0 · Ray 18d ago
mmst2222a-tp.step Publish 0.1.0 · Ray 18d ago
package.json Publish 0.1.0 · Ray 18d ago
page.json Set visibility: public · Ray 18d ago
README.md Publish 0.1.0 · Ray 18d ago

MMST2222A-TP

MCC(Micro Commercial Components) · Bipolar (BJT) · SOT-323

MMST2222A-TP from MCC(Micro Commercial Components), in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO is limited to 6 V and the base-emitter saturation voltage is 0.6 to 1.2 V at IC=500mA, IB=50mA.
2 E passive Emitter of the NPN transistor; the emitter-base breakdown voltage V(BR)EBO is 6 V minimum.
3 C passive Collector of the NPN transistor; VCEO is 40 V, VCBO is 75 V and the maximum collector current ICM is 0.6 A.

Key specifications

Parameter Value
Manufacturer MCC(Micro Commercial Components)
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage V(BR)CBO 75 V IC=10µA, IE=0 2
Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=10mA, IB=0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10µA, IC=0 2
Collector-Base Cutoff Current ICBO 100 nA VCB=70V, IE=0 2
Collector Cutoff Current ICEX 10 nA VCE=60V, VBE=3V 2
Emitter Cutoff Current IEBO 100 nA VEB=3V, IC=0 2
DC Current Gain hFE1 50 VCE=10V, IC=1mA 2
DC Current Gain hFE2 100 300 VCE=10V, IC=150mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.6 V IC=500mA, IB=50mA 2
Base-Emitter Saturation Voltage VBE(sat) 0.6 1.2 V IC=500mA, IB=50mA 2
Transition Frequency fT 300 MHz VCE=20V, IC=20mA, f=100MHz 2
Output Capacitance Cob 8 pF VCB=10V, IE=0, f=1MHz 2
Delay Time td 10 ns VCC=30V, VBE(off)=0.5V, IC=150mA, IB1=15mA 2
Rise Time tr 25 ns VCC=30V, VBE(off)=0.5V, IC=150mA, IB1=15mA 2
Storage Time ts 225 ns VCC=30V, IC=150mA, IB1=IB2=15mA 2
Fall Time tf 60 ns VCC=30V, IC=150mA, IB1=IB2=15mA 2
Collector-Base Voltage VCBO 75 V @ 25°C 1
Collector-Emitter Voltage VCEO 40 V @ 25°C 1
Emitter-Base Voltage VEBO 6 V @ 25°C 1
Maximum Collector Current ICM 0.6 A @ 25°C 1
Collector Power Dissipation PC 200 mW @ 25°C 1
Operating Junction Temperature Range TJ -55 150 °C 1
Storage Temperature Range Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: MMST2222A-TP
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: mmst2222a-tp-etched.step / mmst2222a-tp-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmst2222a-tp.step / mmst2222a-tp.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MCC(Micro Commercial Components) datasheet (4 pp, sha256 447758ddf2cdc337, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF