component
MMSS8550-L-TP
Public Made by Adomby adom
MCC Micro Commercial Components Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| mmss8550-l-tp-etched.glb | 17d ago |
| mmss8550-l-tp-etched.step | 17d ago |
| mmss8550-l-tp-hero.glb | 17d ago |
| mmss8550-l-tp-hero.overlay.json | 17d ago |
| mmss8550-l-tp.glb | 17d ago |
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| mmss8550-l-tp.lbr | 17d ago |
| mmss8550-l-tp.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
MMSS8550-L-TP
MCC Micro Commercial Components · Bipolar (BJT) · SOT-23
MMSS8550-L-TP from MCC Micro Commercial Components, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; emitter-base breakdown V(BR)EBO is 6.0V min and emitter-base voltage VEB is 1.6V max at IE=1.5A. |
| 2 | E | passive | Emitter of the PNP transistor; IEBO is 0.1µA max at VEB=5.0V. |
| 3 | C | passive | Collector of the PNP transistor; V(BR)CBO is 40V min, V(BR)CEO is 25V min, collector current is 1.5A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC Micro Commercial Components |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | Vdc | IC=100μAdc, IE=0 | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 25 | Vdc | IC=0.1mAdc, IB=0 | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | Vdc | IE=100μAdc, IC=0 | 1 | ||
| Collector Cutoff Current | ICBO | 0.1 | μAdc | VCB=40Vdc, IE=0 | 1 | ||
| Emitter Cutoff Current | IEBO | 0.1 | μAdc | VEB=5.0Vdc, IC=0 | 1 | ||
| DC Current Gain hFE(1) | hFE(1) | 120 | 350 | --- | IC=100mAdc, VCE=1.0Vdc | 1 | |
| DC Current Gain hFE(2) | hFE(2) | 40 | --- | IC=800mAdc, VCE=1.0Vdc | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | Vdc | IC=800mAdc, IB=80mAdc | 1 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.2 | Vdc | IC=800mAdc, IB=80mAdc | 1 | ||
| Base-Emitter Voltage | VEB | 1.6 | Vdc | IE=1.5Adc | 1 | ||
| Transistor Frequency | fT | 100 | MHz | IC=50mAdc, VCE=10Vdc, f=30MHz | 1 | ||
| Operating and storage junction temperature range | -55 | 150 | °C | Operating and storage junction temperature | 1 | ||
| Power Dissipation | 0.625 | W | Tamb=25°C | 1 |
CAD (KiCad official)
- Symbol:
MMSS8550-L-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmss8550-l-tp-etched.step/mmss8550-l-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmss8550-l-tp.step/mmss8550-l-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC Micro Commercial Components datasheet (2 pp, sha256
b5660de139abf43d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).