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MMS8550HE3-H-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMS8550HE3-H-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
MMS8550HE3-H-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the datasheet gives no base current rating, and VEBO is -5 V maximum. |
| 2 | E | passive | Emitter of the PNP transistor; VEBO is -5 V maximum. |
| 3 | C | passive | Collector of the PNP transistor; IC is -500 mA maximum, VCEO is -25 V, VCBO is -40 V and PC is 300 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-0.1mA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC=-1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-0.1mA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | -0.1 | uA | VCB=-40V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=-5V, IC=0 | 2 | ||
| DC current gain | hFE | 200 | 350 | VCE=-1V, IC=-50mA | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.6 | V | IC=-500mA, IB=-50mA | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-500mA, IB=-50mA | 2 | ||
| Transition frequency | fT | 150 | MHz | VCE=-6V, IC=-20mA, f=30MHz | 2 | ||
| Collector output capacitance | Cob | 5 | pF | VCB=-10V, IE=0, f=1MHz | 2 | ||
| Collector-base voltage | VCBO | -40 | V | 1 | |||
| Collector-emitter voltage | VCEO | -25 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current | IC | -500 | mA | 1 | |||
| Collector power dissipation | PC | 300 | mW | 1 | |||
| Thermal resistance from junction to ambient | RΘJA | 416 | ℃/W | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
MMS8550HE3-H-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mms8550he3-h-hxy-etched.step/mms8550he3-h-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mms8550he3-h-hxy.step/mms8550he3-h-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
505e98fb5618bb4a, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).