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MMDT5551

Public Made by Adom

by adom

hongjiacheng Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 1mo ago
viewers mmdt5551: viewers · Ray 1mo ago
mmdt5551-etched.glb mmdt5551: factory component page (tier=lcsc) · Ray 1mo ago
mmdt5551-etched.step mmdt5551: factory component page (tier=lcsc) · Ray 1mo ago
mmdt5551-hero.glb mmdt5551: hero GLB from the etched model (keeps the MPN mark) · Ray 1mo ago
mmdt5551-hero.overlay.json Publish 0.1.0 · Ray 1mo ago
mmdt5551.glb Publish 0.1.0 · Ray 1mo ago
mmdt5551.kicad_mod Publish 0.1.0 · Ray 1mo ago
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mmdt5551.lbr Publish 0.1.0 · Ray 1mo ago
mmdt5551.step Publish 0.1.0 · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json mmdt5551: specified limits as data (metadata.characteristics, 21 rows from the datasheet) · Ray 23d ago
README.md mmdt5551: specified limits as data (metadata.characteristics, 21 rows from the datasheet) · Ray 23d ago

MMDT5551

hongjiacheng · Bipolar (BJT) · SOT-363

MMDT5551 from hongjiacheng, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (NPN), per function diagram; VEBO max 6.0 V.
2 B1 passive Base of transistor 1 (NPN), per function diagram; VEBO max 6.0 V.
3 C2 passive Collector of transistor 2 (NPN), per function diagram; VCEO 160 V, VCBO 180 V, IC max 0.2 A.
4 E2 passive Emitter of transistor 2 (NPN), per function diagram; VEBO max 6.0 V.
5 B2 passive Base of transistor 2 (NPN), per function diagram; VEBO max 6.0 V.
6 C1 passive Collector of transistor 1 (NPN), per function diagram; VCEO 160 V, VCBO 180 V, IC max 0.2 A.

Key specifications

Parameter Value
Manufacturer hongjiacheng
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 180 V 1
Collector-Emitter Voltage VCEO 160 V 1
Emitter-Base Voltage VEBO 6 V 1
Collector Current IC 0.2 A 1
Collector Power Dissipation PC 0.2 W 1
Storage temperature Tstg -55 150 ℃ 1
Junction temperature Tj 150 ℃ 1
Transition frequency fT 100 300 MHz IC= 10mA, VCE= 10V ,f=100MHz 1
Collector-Base Breakdown Voltage V(BR)CBO 180 V IC=100μA, IE=0 2
Collector-Emitter Breakdown Voltage V(BR)CEO 160 V IC=1mA, IB=0 2
Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=10μA, IC=0 2
Collector-Base cut-off current ICBO 50 nA VCB=120V,IE=0 2
Emitter-Base cut-off current IEBO 50 nA VEB= 4.0V,IC=0 2
DC Current Gain hFE(1) 80 IC=1mA VCE=5V 2
DC Current Gain hFE(2) 100 300 IC=10mA VCE= 5V 2
DC Current Gain hFE(3) 30 IC=50mA VCE=5V 2
Collector-Emitter Saturation Voltage VCE(sat) 0.15 V IC= 10mA IB= 1mA 2
Collector-Emitter Saturation Voltage VCE(sat) 0.2 V IC= 50mA IB= 5mA 2
Base-Emitter Saturation Voltage VBE(sat) 1 V IC= 10mA IB= 1mA 2
Output Capacitance Cob 6 pF VCB= 10V, IE=0, f=1MHZ 2
Typical Thermal Resistance RθJ-A 625 ℃/W 1

CAD (KiCad official)

  • Symbol: MMDT5551
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt5551-etched.step / mmdt5551-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt5551.step / mmdt5551.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: hongjiacheng datasheet (4 pp, sha256 8ca3f18eb1da136f, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF