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Contents

README

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MMDT5401G

LGE · Bipolar (BJT) · SOT-363

MMDT5401G from LGE, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of transistor 2; emitter-base voltage rating -5 V, collector current up to -0.2 A continuous.
2 B2 passive Base of transistor 2; VEBO -5 V, VCE(sat) max -0.5 V at IC=-50 mA, IB=-5 mA.
3 C1 passive Collector of transistor 1; VCBO -160 V, VCEO -150 V, IC -0.2 A continuous.
4 E1 passive Emitter of transistor 1; emitter-base voltage rating -5 V, collector current up to -0.2 A continuous.
5 B1 passive Base of transistor 1; VEBO -5 V, VCE(sat) max -0.5 V at IC=-50 mA, IB=-5 mA.
6 C2 passive Collector of transistor 2; VCBO -160 V, VCEO -150 V, IC -0.2 A continuous.

Key specifications

Parameter Value
Manufacturer LGE
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -160 V IC=-100μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -150 V IC=-1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10μA, IC=0 1
Collector cut-off current ICBO -0.05 μA VCB=-120V, IE=0 1
Emitter cut-off current IEBO -0.05 μA VEB=-3V, IC=0 1
DC current gain hFE(1) 50 VCE=-5V, IC=-1mA 1
DC current gain hFE(2) 60 240 VCE=-5V, IC=-10mA 1
Collector-emitter saturation voltage VCE(sat)1 -0.2 V IC=-10mA, IB=-1mA 1
Collector-emitter saturation voltage VCE(sat)2 -0.5 V IC=-50mA, IB=-5mA 1
Base-emitter saturation voltage VBE(sat)1 -1 V IC=-10mA, IB=-1mA 1
Transition frequency fT 100 MHz VCE=-10V, IC=-10mA, f=100MHz 1
Output capacitance Cob 6 pF VCB=-10V, IE=0, f=1MHz 1
Noise figure NF 8 dB VCE=-5.0V, IC=-200μA, RS=10Ω, f=1.0kHz 1
Collector-base voltage (absolute maximum) VCBO -160 V 1
Collector-emitter voltage (absolute maximum) VCEO -150 V 1
Emitter-base voltage (absolute maximum) VEBO -5 V 1
Collector current, continuous (absolute maximum) IC -0.2 A Continuous 1
Collector power dissipation PC 0.2 W 1
Junction temperature TJ 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMDT5401G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt5401g-etched.step / mmdt5401g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt5401g.step / mmdt5401g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: LGE datasheet (2 pp, sha256 32af059a8dd58a73, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF