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MMDT5401-7-F

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Diodes Incorporated Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMDT5401-7-F

Diodes Incorporated · Bipolar (BJT) · SOT-363

MMDT5401-7-F from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (PNP); VEBO rated -6 V.
2 B1 passive Base of transistor 1; VEBO rated -6 V.
3 C2 passive Collector of transistor 2; VCEO -150 V, VCBO -160 V, IC continuous -200 mA.
4 E2 passive Emitter of transistor 2 (PNP); VEBO rated -6 V.
5 B2 passive Base of transistor 2; VEBO rated -6 V.
6 C1 passive Collector of transistor 1; VCEO -150 V, VCBO -160 V, IC continuous -200 mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -160 V 2
Collector-Emitter Voltage VCEO -150 V 2
Emitter-Base Voltage VEBO -6 V 2
Continuous Collector Current IC -200 mA 2
Power Dissipation PD 200 mW Note 5 2
Power Dissipation PD 320 mW Notes 6 & 7 2
Thermal Resistance, Junction to Ambient RθJA 625 °C/W Note 5 2
Thermal Resistance, Junction to Ambient RθJA 390 °C/W Notes 6 & 7 2
Thermal Resistance, Junction to Case RθJC 140 °C/W Note 8 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Collector-Base Breakdown Voltage BVCBO -160 V IC = -100µA, IE = 0 2
Collector-Emitter Breakdown Voltage BVCEO -150 V IC = -1mA, IB = 0 2
Emitter-Base Breakdown Voltage BVEBO -6 V IE = -100µA, IC = 0 2
Collector-Base Cutoff Current ICBO -50 nA VCB = -120V, IE = 0 2
Collector-Base Cutoff Current ICBO -50 µA VCB = -120V, IE = 0, TA = +100°C 2
Base-Emitter Cutoff Current IEBO -50 nA VEB = -5V, IC = 0 2
DC Current Gain hFE 50 IC = -1mA, VCE = -5V 2
DC Current Gain hFE 60 240 IC = -10mA, VCE = -5V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.2 V IC = -10mA, IB = -1mA 2
Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC = -50mA, IB = -5mA 2
Base-Emitter Saturation Voltage VBE(sat) -1 V IC = -10mA, IB = -1mA; IC = -50mA, IB = -5mA 2
Output Capacitance Cobo 6 pF VCB = -10V, f = 1MHz, IE = 0 2
Small Signal Current Gain hfe 40 260 IC = -1mA, VCE = -10V, f = 1MHz 2
Current Gain-Bandwidth Product fT 100 300 MHz IC = -10mA, VCE = -10V, f = 100MHz 2
Noise Figure NF 8 dB VCE = -5V, IC = -200µA, RS = 10Ω, f = 1kHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish  Matte Tin Finish. Solderable per MIL-STD￾202, Method 208  Weight: 0.006 grams (Approximate) 1

CAD (KiCad official)

  • Symbol: MMDT5401-7-F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt5401-7-f-etched.step / mmdt5401-7-f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt5401-7-f.step / mmdt5401-7-f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 60782226cab7acfa, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF