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Contents

README

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MMDT4401DW

CBI · Bipolar (BJT) · SOT-363

MMDT4401DW from CBI, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (NPN); VEBO max 6 V, IC max 0.6 A continuous.
2 B1 input Base of transistor 1 (NPN); VEBO max 6 V, VCBO 60 V.
3 C2 passive Collector of transistor 2 (NPN); VCEO max 40 V, VCBO 60 V, IC max 0.6 A continuous.
4 E2 passive Emitter of transistor 2 (NPN); VEBO max 6 V, IC max 0.6 A continuous.
5 B2 input Base of transistor 2 (NPN); VEBO max 6 V, VCBO 60 V.
6 C1 passive Collector of transistor 1 (NPN); VCEO max 40 V, VCBO 60 V, IC max 0.6 A continuous.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 60 V IC= 100 μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 40 V IC= 1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 6 V IE= 100 μA, IC=0 1
Collector cut-off current ICBO 0.1 μA VCB= 50 V, IE=0 1
Collector cut-off current ICEO 0.5 μA VCE= 35 V, IB=0 1
Emitter cut-off current IEBO 0.1 μA VEB= 5V, IC=0 1
DC current gain hFE(1) 20 VCE= 1V, IC= 0.1mA 1
DC current gain hFE(2) 40 VCE= 1V, IC= 1mA 1
DC current gain hFE(3) 80 VCE= 1V, IC= 10mA 1
DC current gain hFE(4) 100 300 VCE= 1V, IC= 150mA 1
Collector-emitter saturation voltage VCE(sat)1 0.4 V IC=150 mA, IB= 15mA 1
Collector-emitter saturation voltage VCE(sat)2 0.75 V IC=500 mA, IB= 50mA 1
Base-emitter saturation voltage VBE(sat)1 0.75 0.95 V IC= 150 mA, IB= 15mA 1
Base-emitter saturation voltage VBE(sat)2 1.2 V IC= 500 mA, IB= 50mA 1
Transition frequency fT 250 MHz VCE= 10V, IC= 20mA, f=100MHz 1
Output capacitance Cob 6.5 pF VCB=5V, IE= 0, f=1MHz 1
Delay time td 15 nS 1
Rise time tr 20 nS VCC=30V, VBE=2V, IC=150mA, IB1=15mA 1
Storage time tS 225 nS 1
Fall time tf 30 nS VCC=30V, IC=150mA, IB1=-IB2=15mA 1
Collector-base voltage VCBO 60 V 1
Collector-emitter voltage VCEO 40 V 1
Emitter-base voltage VEBO 6 V 1
Collector current -Continuous IC 0.6 A 1
Collector power dissipation PC 0.2 W 1
Thermal resistance from junction to ambient RθJA 625 ℃/W 1
Junction temperature TJ 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMDT4401DW
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt4401dw-etched.step / mmdt4401dw-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt4401dw.step / mmdt4401dw.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (3 pp, sha256 fb1f20c534dc8663, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF