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MMDT4401

Public Made by Adom

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Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMDT4401

Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-363

MMDT4401 from Yangzhou Yangjie Elec Tech, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E2 passive Emitter of transistor 2 (Q2), per the equivalent circuit on page 1.
2 B2 passive Base of transistor 2 (Q2), per the equivalent circuit on page 1.
3 C1 passive Collector of transistor 1 (Q1); VCEO is 40 V and continuous IC is 600 mA.
4 E1 passive Emitter of transistor 1 (Q1), per the equivalent circuit on page 1.
5 B1 passive Base of transistor 1 (Q1), per the equivalent circuit on page 1.
6 C2 passive Collector of transistor 2 (Q2); VCEO is 40 V and continuous IC is 600 mA.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 60 V IC=100μA,IE=0 2
Collector-emitter voltage VCEO 40 V IC=1mA,IB=0 2
Emitter-base voltage VEBO 6 V IE=100μA,IC=0 2
Collector current - continuous IC 600 mA 2
Total device dissipation PC 200 mW 2
Junction temperature Tj 150 ℃ 2
Storage temperature TSTG -55 150 ℃ 2
Collector-base breakdown voltage VCBO 60 V IC=100μA,IE=0 2
Collector-emitter breakdown voltage VCEO 40 V IC=1mA,IB=0 2
Emitter-base breakdown voltage VEBO 6 V IE=100μA,IC=0 2
Collector cut-off current ICBO 100 nA VCB=50V,IE=0 2
Collector cut-off current ICEO 500 nA VCE=35V, IB=0 2
Emitter cut-off current IEBO 100 nA VEB=3V, IC=0 2
DC current gain hFE1 hFE1 20 VCE=1V,IC=0.1mA 2
DC current gain hFE2 hFE2 40 VCE=1V,IC=1mA 2
DC current gain hFE3 hFE3 80 VCE=1V,IC=10mA 2
DC current gain hFE4 hFE4 100 300 VCE=1V,IC=150mA 2
DC current gain hFE5 hFE5 40 VCE=2V,IC=500mA 2
Collector-emitter saturation voltage VCE(sat) 0.4 V IC=150mA,IB=15mA 2
Collector-emitter saturation voltage VCE(sat) 0.75 V IC=500mA,IB=50mA 2
Base-emitter saturation voltage VBE(sat) 0.95 V IC=150mA,IB=15mA 2
Base-emitter saturation voltage VBE(sat) 1.2 V IC=500mA,IB=50mA 2
Transition frequency fT 250 MHz VCE=10V,IC=20mA,f=100MHz 2
Delay time td 15 ns VCC=30V,IC=150mA, IB1=15mA,VBE(off)=2V 2
Rise time tr 20 ns 2
Storage time ts 225 ns VCC=30V,IC=150mA, IB1=- IB2=5mA 2
Fall time tf 30 ns 2

CAD (KiCad official)

  • Symbol: MMDT4401
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: mmdt4401-etched.step / mmdt4401-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt4401.step / mmdt4401.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256 190d60b530e82145, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF