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MMDT3946F

Public Made by Adom

by adom

YFW Bipolar (BJT), SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMDT3946F

YFW · Bipolar (BJT) · SOT-23-6L

MMDT3946F from YFW, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of the NPN 3904-type transistor (Q1); VEBO rating 5 V, IC continuous 0.2 A.
2 B1 input Base of the NPN 3904-type transistor (Q1); emitter-base voltage max 5 V.
3 C2 passive Collector of the PNP 3906-type transistor (Q2); VCEO -40 V, VCBO -40 V, IC continuous -0.2 A.
4 E2 passive Emitter of the PNP 3906-type transistor (Q2); VEBO rating -5 V.
5 B2 input Base of the PNP 3906-type transistor (Q2); emitter-base voltage max -5 V.
6 C1 passive Collector of the NPN 3904-type transistor (Q1); VCEO 40 V, VCBO 60 V, IC continuous 0.2 A.

Key specifications

Parameter Value
Manufacturer YFW
Package SOT-23-6L
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage (NPN 3904) VCBO 60 V 1
Collector-Emitter Voltage (NPN 3904) VCEO 40 V 1
Emitter-Base Voltage (NPN 3904) VEBO 5 V 1
Collector Current -Continuous (NPN 3904) IC 0.2 A 1
Collector Power Dissipation (NPN 3904) PC 0.3 W 1
Junction Temperature (NPN 3904) TJ 150 ℃ 1
Storage Temperature (NPN 3904) Tstg -55 150 ℃ 1
Collector-Base Voltage (PNP 3906) VCBO -40 V 2
Collector-Emitter Voltage (PNP 3906) VCEO -40 V 2
Emitter-Base Voltage (PNP 3906) VEBO -5 V 2
Collector Current -Continuous (PNP 3906) IC -0.2 A 2
Collector Power Dissipation (PNP 3906) PC 0.2 W 2
Junction Temperature (PNP 3906) TJ 150 ℃ 2
Storage Temperature (PNP 3906) Tstg -55 150 ℃ 2
Collector-base breakdown voltage (NPN 3904) V(BR)CBO 60 V IC = 10μA, IE=0 1
Collector-emitter breakdown voltage (NPN 3904) V(BR)CEO 40 V IC= 1mA, IB=0 1
Emitter-base breakdown voltage (NPN 3904) V(BR)EBO 5 V IE= 10μA, IC=0 1
Collector cut-off current (NPN 3904) ICBO 0.05 μA VCB= 30 V , IE=0 1
Collector cut-off current (NPN 3904) ICEO 0.5 μA VCE= 30 V , IB=0 1
Emitter cut-off current (NPN 3904) IEBO 0.05 μA VEB= 5V , IC=0 1
DC current gain hFE(1) (NPN 3904) hFE(1) 40 VCE= 1V, IC= 0.1mA 1
DC current gain hFE(2) (NPN 3904) hFE(2) 70 VCE= 1V, IC= 1mA 1
DC current gain hFE(3) (NPN 3904) hFE(3) 100 300 VCE= 1V, IC= 10mA 1
DC current gain hFE(4) (NPN 3904) hFE(4) 60 VCE= 1V, IC= 50mA 1
DC current gain hFE(5) (NPN 3904) hFE(5) 30 VCE= 1V, IC= 100mA 1
Collector-emitter saturation voltage VCE(sat)1 (NPN 3904) VCE(sat)1 0.2 V IC=10 mA, IB= 1mA 1
Collector-emitter saturation voltage VCE(sat)2 (NPN 3904) VCE(sat)2 0.3 V IC=50 mA, IB= 5mA 1
Base-emitter saturation voltage VBE(sat)1 (NPN 3904) VBE(sat)1 0.65 0.85 V IC= 10 mA, IB= 1mA 1
Base-emitter saturation voltage VBE(sat)2 (NPN 3904) VBE(sat)2 0.95 V IC= 50 mA, IB= 5mA 1
Transition frequency (NPN 3904) fT 300 MHz VCE=20V,IC=20mA, f=100MHz 1
Noise figure (NPN 3904) NF 5 dB VCE=5V,Ic=0.1mA, f=1KHz,Rg=1KΩ 1
Output capacitance (NPN 3904) Cob 4 pF VCB=5V,IE=0,f=1MHz 1
Delay time (NPN 3904) td 35 nS VCC=3V, VBE=0.5V, IC=10mA, IB1=-IB2=1mA 1
Rise time (NPN 3904) tr 35 nS 1
Storage time (NPN 3904) tS 200 nS VCC=3V, IC=10mA, IB1=-IB2= 1mA 1
Fall time (NPN 3904) tf 50 nS 1
Collector-base breakdown voltage (PNP 3906) V(BR)CBO -40 V IC=-10μA,IE=0 2
Collector-emitter breakdown voltage (PNP 3906) V(BR)CEO -40 V IC=-1mA,IB=0 2
Emitter-base breakdown voltage (PNP 3906) V(BR)EBO -5 V IE=-10μA,IC=0 2
Collector cut-off current (PNP 3906) ICBO -0.05 μA VCB=-30V,IE=0 2
Emitter cut-off current (PNP 3906) IEBO -0.05 μA VEB=-5V,IC=0 2
DC current gain hFE(1) (PNP 3906) hFE(1) 60 VCE=-1V,IC=-0.1mA 2
DC current gain hFE(2) (PNP 3906) hFE(2) 80 VCE=-1V,IC=-1mA 2
DC current gain hFE(3) (PNP 3906) hFE(3) 100 300 VCE=-1V,IC=-10mA 2
DC current gain hFE(4) (PNP 3906) hFE(4) 60 VCE=-1V,IC=-50mA 2
DC current gain hFE(5) (PNP 3906) hFE(5) 30 VCE=-1V,IC=-100mA 2
Collector-emitter saturation voltage VCE(sat)1 (PNP 3906) VCE(sat)1 -0.25 V IC=-10mA,IB=-1mA 2
Collector-emitter saturation voltage VCE(sat)2 (PNP 3906) VCE(sat)2 -0.4 V IC=-50mA,IB=-5mA 2
Base-emitter saturation voltage VBE(sat)1 (PNP 3906) VBE(sat)1 -0.65 -0.85 V IC=-10mA,IB=-1mA 2
Base-emitter saturation voltage VBE(sat)2 (PNP 3906) VBE(sat)2 -0.95 V IC=-50mA,IB=-5mA 2
Transition frequency (PNP 3906) fT 250 MHz VCE=-20V,IC=-10mA,f=100MHz 2
Collector output capacitance (PNP 3906) Cob 4.5 pF VCB=-5V,IE=0,f=1MHz 2
Noise figure (PNP 3906) NF 4 dB VCE=-5V,Ic=-0.1mA, f=1KHz,Rg=1KΩ 2
Delay time (PNP 3906) td 35 nS VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=-IB2=-1mA 2
Rise time (PNP 3906) tr 35 nS 2
Storage time (PNP 3906) tS 225 nS VCC=-3V, IC=-10mA, IB1=-IB2=- 1mA 2
Fall time (PNP 3906) tf 75 nS 2

CAD (KiCad official)

  • Symbol: MMDT3946F
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: mmdt3946f-etched.step / mmdt3946f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt3946f.step / mmdt3946f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: YFW datasheet (3 pp, sha256 1152940bd13ea5b1, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF