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MMDT3906SG

Public Made by Adom

by adom

PJSEMI Bipolar (BJT), SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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MMDT3906SG

PJSEMI · Bipolar (BJT) · SOT-23-6

MMDT3906SG from PJSEMI, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B1 passive Base terminal of PNP transistor 1; the datasheet gives only device-level ratings (VCBO -40 V, VCEO -40 V, VEBO -6 V, IC -200 mA) and no per-pin limits.
2 E2 passive Emitter terminal of PNP transistor 2; the datasheet gives only device-level ratings and no per-pin limits.
3 B2 passive Base terminal of PNP transistor 2; the datasheet gives only device-level ratings and no per-pin limits.
4 C2 passive Collector terminal of PNP transistor 2; the datasheet gives only device-level ratings and no per-pin limits.
5 E1 passive Emitter terminal of PNP transistor 1; the datasheet gives only device-level ratings and no per-pin limits.
6 C1 passive Collector terminal of PNP transistor 1; the datasheet gives only device-level ratings and no per-pin limits.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (IC = -0.1 mA) HFE 60 VCE = -1 V, IC = -0.1 mA 2
DC Current Gain (IC = -1 mA) HFE 80 VCE = -1 V, IC = -1 mA 2
DC Current Gain (IC = -10 mA) HFE 100 300 VCE = -1 V, IC = -10 mA 2
DC Current Gain (IC = -50 mA) HFE 60 VCE = -1 V, IC = -50 mA 2
DC Current Gain (IC = -100 mA) HFE 30 VCE = -1 V, IC = -100 mA 2
Collector Base Cutoff Current -ICBO 0.5 nA VCB = -30 V 2
Emitter Base Cutoff Current -IEBO 50 nA VEB = -6 V 2
Collector Base Breakdown Voltage -V(BR)CBO 40 V IC = -10 μA 2
Collector Emitter Breakdown Voltage -V(BR)CEO 40 V IC = -1 mA 2
Emitter Base Breakdown Voltage -V(BR)EBO 6 V IE = -10 μA 2
Collector Emitter Saturation Voltage -VCE(sat) 0.25 V IC = -10 mA, IB = -1 mA 2
Collector Emitter Saturation Voltage -VCE(sat) 0.4 V IC = -50 mA, IB = -5 mA 2
Base Emitter Saturation Voltage -VBE(sat) 0.65 0.85 V IC = -10 mA, IB = -1 mA 2
Base Emitter Saturation Voltage -VBE(sat) 0.95 V IC = -50 mA, IB = -5 mA 2
Transition Frequency FT 250 MHz VCE = -20 V, IC = -10 mA, f = 100 MHz 2
Output Capacitance Cob 4.5 pF VCB = -5 V, IE = 0, f = 1 MHz 2
Collector Base Voltage -VCBO 40 V 1
Collector Emitter Voltage -VCEO 40 V 1
Emitter Base Voltage -VEBO 6 V 1
Collector Current -IC 200 mA 1
Maximum Power Dissipation PD 1 W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: MMDT3906SG
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: mmdt3906sg-etched.step / mmdt3906sg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmdt3906sg.step / mmdt3906sg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (6 pp, sha256 9ed2291bd19bd36c, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF